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Ramesh Singh Bisht

Observed name: Bisht, Ramesh Singh
ORCID: 0009-0008-3961-3089
Observed ORCID: 0009-0008-3961-3089
OpenAlex ID: A5000179969
Simulation study of various factors affecting the performance of vertical organic field-effect transistors
2023 · Ramesh Singh Bisht, Pramod Kumar · Engineering Research Express · 7
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Inverted resistive switching mechanism in polycrystalline PBTTT-C14 polymer devices based on contact geometry and molecular packing for neuromorphic memory
2025 · Ramesh Singh Bisht, Pramod Kumar · Journal of Materials Chemistry C · 6
Simulation Study on Comparison of “Inside-Channel” and “On-Dielectric” Source Contact Modifications on the Performance of the Vertical Organic Field Effect Transistors
2024 · Sirsendu Ghosh, Ramesh Singh Bisht, et al. · IEEE Transactions on Electron Devices · 6
Predicting the miniaturization limit of vertical organic field effect transistor (VOFET) with perforated graphene as a source electrode
2023 · Gaurav Shukla, Ramesh Singh Bisht, et al. · Nanotechnology · 5
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Trade-Off in Key Electrical Parameters of MoS2 Field-Effect Transistors with the Number of Layers
2025 · Samiksha Bhatia, Ramesh Singh Bisht, et al. · ACS Applied Electronic Materials · 4
Impact of graphene layer thickness on switching speed of the vertical organic field effect transistor
2025 · Gaurav Shukla, Ramesh Singh Bisht, et al. · AIP conference proceedings · 3
Depletion to Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
2026 · Bhatia, Samiksha, Bisht, Ramesh Singh, et al. · arXiv (Cornell University)
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Author response for "Inverted resistive switching mechanism in polycrystalline PBTTT-C14 polymer devices based on contact geometry and molecular packing for neuromorphic memory"
2025 · Ramesh Singh Bisht, Pramod Kumar · Publons reviews and discussion
Effect of charge carrier mobility in channel vs. source-drain region on vertical organic field effect transistor performance
2025 · Ramesh Singh Bisht, Pramod Kumar · AIP conference proceedings
Works count: 9
Citation count: 31
H-index: 4
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