Author

K. Fujino

Observed name: K. FUJINO

Observed institutions: Fujitsu (Japan), The University of Tokyo

ORCID: 0009-0006-2649-8670

Observed ORCID: 0009-0006-2649-8670

OpenAlex ID: A5000335105

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

1990 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 127

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Dependence of Deposition Characteristics on Base Materials in TEOS and Ozone CVD at Atmospheric Pressure

1991 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 34

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Doped Silicon Oxide Deposition by Atmospheric Pressure and Low Temperature Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

1991 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 22

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SiO2 films deposited on Si substrates studied by monoenergetic positron beams

1994 · A. Uedono, L. Wei, et al. · Journal of Applied Physics · 21

Surface Modification of Base Materials for TEOS / O 3 Atmospheric Pressure Chemical Vapor Deposition

1992 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 21

Step‐Coverage Simulation for Tetraethoxysilane and Ozone Atmospheric Pressure Chemical Vapor Deposition

1993 · K. Fujino, Y. Egashira, et al. · Journal of The Electrochemical Society · 14

Low Temperature and Atmospheric Pressure CVD Using Polysiloxane, OMCTS, and Ozone

1991 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 13

Low Temperature, Atmospheric Pressure CVD Using Hexamethyldisiloxane and Ozone

1992 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 12

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TEOS and Ozone Atmospheric Pressure CVD of Borophosphosilicate Glass Films Using Triethylborate and Trimethylphosphate

1993 · K. Fujino, Y. Nishimoto, et al. · Journal of The Electrochemical Society · 11

Characterization of silicon dioxide deposited by low-temperature CVD using TEOS and ozone by monoenergetic positron beams

1994 · A. Uedono, L. Wei, et al. · Hyperfine Interactions · 6

Dielectric film deposition by atmospheric pressure and low temperature CVD using TEOS, ozone, and new organometallic doping sources

2003 · Y. Nishimoto, N. Tokumasu, et al. · International IEEE VLSI Multilevel Interconnection Conference · 5

Dry Etching of Al Alloy Films Using HBr Mixed Gases

1992 · K. Fujino, T. Oku · Journal of The Electrochemical Society · 5

Reaction mechanism of TEOS and O/sub 3/ atmospheric pressure CVD

2002 · K. Fujino, Y. Nishimoto, et al. · International IEEE VLSI Multilevel Interconnection Conference · 3

Amorphous Silicon Image Sensor : Characteristics of an ITO/a-Si:H Junction

1988 · S. Ri, H. Fujioka, et al. · MRS Proceedings · 2

ChemInform Abstract: TEOS and Ozone Atmospheric Pressure CVD of Borophosphosilicate Glass Films Using Triethylborate and Trimethylphosphate.

1994 · K. FUJINO, Y. NISHIMOTO, et al. · ChemInform

ChemInform Abstract: Low Temperature, Atmospheric Pressure CVD Using Hexamethyldisiloxane and Ozone.

1992 · K. FUJINO, Y. NISHIMOTO, et al. · ChemInform

ChemInform Abstract: Low Temperature and Atmospheric Pressure CVD Using Polysiloxane, OMCTS, and Ozone.

1992 · K. FUJINO, Y. NISHIMOTO, et al. · ChemInform

ChemInform Abstract: Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone.

1990 · K. FUJINO, Y. NISHIMOTO, et al. · ChemInform

Works count: 18

Citation count: 296

H-index: 9

I10-index: 9