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Biju Parameshwaran
Observed name:
B. Parameshwaran
Institution:
GlobalFoundries (United States)
Observed institutions:
GlobalFoundries (United States),
Advanced Micro Devices (United States),
Arizona State University
OpenAlex ID:
A5000722518
Accurate product lifetime predictions based on device-level measurements
2009
·
T. Nigam
, B. Parameshwaran
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
39
Impact of AC voltage stress on core NMOSFETs TDDB in FinFET and planar technologies
2017
·
R. Ranjan
, Y. Liu
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
35
Device reliability metric for end-of-life performance optimization based on circuit level assessment
2017
·
A. Kerber
, P. Srinivasan
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
30
Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process
2013
·
W. McMahon
, C. Tian
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
13
Impact of e-SiGe S/D processes on FinFET PFET TDDB reliability
2017
·
R. Ranjan
, S. Uppal
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
9
Reliability-performance trade-off for work-function optimization in advanced node replacement metal gate technology
2016
·
R. Ranjan
, T. Nigam
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
8
Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability
2016
·
Premachandran C. S.
, Luke England
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
7
Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices
1996
·
J.W. Hutchins
, B. Parameshwaran
, et al.
·
Journal of Crystal Growth
·
4
Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing
2015
·
Y. Mamy Randriamihaja
, W. McMahon
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
3
HTOL SRAM Vmin shift considerations in scaled HKMG technologies
2014
·
S. Balasubramanian
, V. Joshi
, et al.
·
Custom Integrated Circuits Conference
·
3
Reliability of 2T-core CMOS OTP non-volatile memory bitcells
2017
·
R. Ranjan
, T. Nigam
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
2
Bias-Induced Healing of $V_{\text {min}}$ Failures in Advanced SRAM Arrays
2016
·
Randy W. Mann
, William McMahon
, et al.
·
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
·
2
Impact of wafer thinning on High-K Metal Gate 20nm devices
2013
·
Adam Beece
, Rahul Agarwal
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
2
MTPM ramped programming optimization methodology
2017
·
Y. Mamy Randriamihaja
, W. McMahon
, et al.
·
IEEE International Reliability Physics Symposium proceedings
MBE Growth and Characterization of Epitaxial MnS and ZnSe Heterostructures on GaAs
1993
·
B.J. Skromme
, Y. Zhang
, et al.
·
MRS Proceedings
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Works count:
15
Citation count:
157
H-index:
7
I10-index:
4
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