Author

Chunyan Chen

Institution: Shenzhen University

Observed institutions: Shenzhen University, Yangzhou University

ORCID: 0009-0003-1849-5769

Observed ORCID: 0009-0003-1849-5769

OpenAlex ID: A5001201412

The effect of O2 high-temperature annealing on the quality of Al2O3/Ga2O3 interface

2025 · Chunyan Chen, Yutong Wu, et al. · Applied Physics Letters · 4

Synthesis and Characterization of Bi6FeMTi3O18 (M = Mn, Fe, Co, and Ni) Aurivillius Phase Ceramics

2012 · Xiangyu Mao, Wenlu Yang, et al. · Procedia Engineering · 2

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2-kV Vertical β -Ga 2 O 3 MOSFET With p-Cu 2 O Body via Barrier-Modulated Electron Transport

2026 · Jiajun Han, Sichao Li, et al. · IEEE Electron Device Letters · 1

He-induced semi-insulating microcolumns for high-voltage leakage current suppression in β -Ga2O3 Schottky barrier diodes

2026 · Chunyan Chen, Huile Zhang, et al. · Applied Physics Letters

High-Voltage Ga 2 O 3 Schottky Barrier Diodes with Inserted Semi-Insulating Microcolumns for Suppression of Reverse Current

2026 · Chunyan Chen, Jiachang Guo, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

1.4kV/1.61mΩ•cm 2 Vertical p-NiO/n-GaN Heterojunction Diodes with Deep Helium-implanted Edge Termination and Oxygen Plasma Treatment

2026 · Zihao Huang, Huile Zhang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

Works count: 6

Citation count: 7

H-index: 2

I10-index: