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Yunsur Kim

Observed names: Kim, Yunsur, Y.‐H. KIM
ORCID: 0009-0005-2953-0712
Observed ORCID: 0009-0005-2953-0712
OpenAlex ID: A5001537512
Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics
2024 · Hyoungjin Park, Jiae Jeong, et al. · Applied Physics Letters · 8
Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems
2024 · Yunsur Kim, Hyejin Kim, et al. · IEEE Transactions on Electron Devices · 6
Highly Controllable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing
2024 · Hyeonsik Choi, Hyun Wook Kim, et al. · 5
Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments
2024 · Nayeon Kim, Hyoungjin Park, et al. · IEEE Electron Device Letters · 4
Dual Ferroelectric Stack of HfZrO₂/Al:HfO₂ With Tunable Coercive Voltage for High-Density Memory Applications
2024 · Jiae Jeong, Hyoungjin Park, et al. · IEEE Transactions on Electron Devices · 4
Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of InxZn1–xOy Channel Ferroelectric FETs
2024 · Jiae Jeong, Hyoungjin Park, et al. · The Journal of Physical Chemistry Letters · 2
Engineering Strategies in HfOx RRAM-Based Analog Synapses Toward Linear Weight Update for Neuromorphic Hardware Accelerators
2024 · Yunsur Kim, Hyeonsik Choi, et al. · IEEE Silicon Nanoelectronics Workshop · 2
Optimizing electrochemical and ferroelectric synaptic devices: from material selection to performance tuning
2025 · Eunjin Kim, Seonuk Jeon, et al. · Neuromorphic Computing and Engineering · 1
Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics
2024 · Hyeonsik Choi, Hyun Wook Kim, et al. · AIP Advances · 1
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Fully Sputtered HfO y /HfO x RRAM: Improved Synaptic Behavior for Neuromorphic Training Accelerators
2026 · Yunsur Kim, Seonuk Jeon, et al. · IEEE Transactions on Electron Devices
Energy- and Area-Efficient Ionic-Switch Activation Neuron for Monolithic 3D Neural Network Architectures
2026 · Yuna Kim, Seojin Cho, et al. · ACS Nano
Analog memory characteristics in epitaxial SrCoO2.5 films of various thicknesses on (001)-oriented Nb:SrTiO3 substrates
2026 · Minseong Kim, Yunsur Kim, et al. · Current Applied Physics
Electric Field-Moderated Filament Control for Cryogenic RRAM Synapse
2025 · Yunsur Kim, Jiyong Woo · IEEE Electron Device Letters
Cryogenic RRAM Analog Synapse (CRAS) for Unconventional Computing Systems
2025 · Yunsur Kim, Jiyong Woo · International Conference on Solid State Devices and Materials (SSDM)
Scalable and Energy-Efficient Peierls Transition Neuron for Monolithic Integrated Neural Network
2025 · Daeseok Lee, Seojin Cho, et al. · Research Square
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Reliability-Ensured and Fast (< 100 ns) Analog Synapse for Training Accelerators: All-Sputtered HfOy/HfOxRRAM
2025 · Yunsur Kim, Seonuk Jeon, et al. · IEEE International Reliability Physics Symposium proceedings
ChemInform Abstract: Synthesis of Bisspiromacrocyclic Ionophores Tailor‐Made for Lithium Ion.
1996 · H.‐J. CHOI, Y.‐H. KIM, et al. · ChemInform
ChemInform Abstract: The Photochemical Reactions of the Halogenated N‐Benzylanilines. Mechanism of the Reactions.
1995 · Y.‐T. PARK, I.‐H. LEE, et al. · ChemInform
Works count: 19
Citation count: 33
H-index: 4
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