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R. Mallikarjun

Observed name: R Mallikarjun
Institution: Alliance University
ORCID: 0000-0003-3127-5624
Observed ORCID: 0000-0003-3127-5624
OpenAlex ID: A5001672857
Evaluation of low magnetic field magnetocapacitance effect in Ni–NiO inhomogeneous medium
2023 · Sukhjot Singh, Jagannath Poojari, et al. · Applied Physics A · 3
Sustainable carboxymethyl cellulose from palm flower agro-waste as a bio-dielectric material for electronic devices
2026 · Sunarkani Ganesh, K. Vijaya Bhaskar Reddy, et al. · International Journal of Biological Macromolecules · 2
Fabrication and characterization of planar electrolyte gated field effect transistor with magnetic electrodes
2023 · R. Mallikarjun, Harish Holla, et al. · Materials Science in Semiconductor Processing · 2
Fabrication and characterization of polyaniline based water gated field effect transistor
2020 · R. Mallikarjun, Sukhjot Singh, et al. · AIP conference proceedings · 2
High ON/OFF ratio and near-thermal subthreshold swing in a p-type silicon channel field-effect transistor
2025 · R. Mallikarjun, N. Nithya, et al. · Physical Chemistry Chemical Physics · 1
Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods
2022 · R. Mallikarjun, Anum Mohammedi, et al. · Topics in Catalysis · 1
Polaronic Relaxation and Variable-Range-Hopping Conductivity in Fe3O4 Nanoparticles
2021 · A K Swetha, B H Pradeep, et al. · IOP Conference Series Materials Science and Engineering · 1
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Bias-induced electrical modulations of MoS₂ field effect transistors
2026 · R. Mallikarjun, N. Nithya, et al. · Applied Physics A
Tuning the resistive switching characteristics of non-stoichiometric tantalum oxide memristors
2026 · N. Nithya, R. Mallikarjun, et al. · Applied Physics A
Non-uniform barrier height approach to characterize the quality of resistive switching element formed with polyvinyl alcohol
2025 · Ranjith M. Ranganathan, R. Mallikarjun, et al. · Journal of Materials Science Materials in Electronics
Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor
2025 · N. Nithya, R. Mallikarjun, et al. · Discover Materials
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Author response for "High ON/OFF ratio and near-thermal subthreshold swing in a p-type silicon channel field-effect transistor"
2025 · R. Mallikarjun, N. Nithya, et al.
Modeling and Simulation of Tantalum and Gallium Oxide-based Memristors
2025 · N. Nithya, R. Mallikarjun, et al. · IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)
Macrospin resonance and giant magnetoimpedance effect in Fe3O4 nanoparticles observed at high frequency and low magnetic field
2024 · A. K. Swetha, R. Mallikarjun, et al. · AIP conference proceedings
Works count: 14
Citation count: 12
H-index: 2
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