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Andrea Arias-Purdue

Observed names: A. Arias-Purdue, Andrea Arias‐Purdue
ORCID: 0000-0001-6990-6968
Observed ORCID: 0000-0001-6990-6968
OpenAlex ID: A5001769339
β-Gallium oxide power electronics
2022 · Andrew J. Green, James Speck, et al. · APL Materials · 563
A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications
2023 · Nicholas C. Miller, Andrea Arias-Purdue, et al. · IEEE Journal of Microwaves · 35
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Prospects for High-Efficiency Silicon and lll-V Power Amplifiers and Transmitters in 100-300 GHz Bands
2021 · James F. Buckwalter, Mark J. W. Rodwell, et al. · Custom Integrated Circuits Conference · 30
Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit
2022 · Daniel M. Dryden, Kyle J. Liddy, et al. · IEEE Electron Device Letters · 27
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A 23.5-dBm, 7.9%-PAE Pseudo-differential Power Amplifier at 136 GHz in 40-nm GaN
2022 · Eythan Lam, Andrea Arias-Purdue, et al. · European Microwave Integrated Circuits Conference · 22
N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz
2023 · Andrea Arias-Purdue, Petra V. Rowell, et al. · IEEE Microwave and Wireless Technology Letters · 15
Gallium Nitride HEMTs for Power Amplifiers above 100 GHz
2022 · Everett O'Malley, Andrea Arias-Purdue, et al. · The ... IEEE Annual Wireless and Microwave Technology Conference · 10
Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands
2021 · James F. Buckwalter, Mark J. W. Rodwell, et al. · ITU Journal on Future and Evolving Technologies · 9
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Artificial Neural Networks for GaN HEMT Model Extraction in D-band Using Sparse Data
2023 · Andrea Arias-Purdue, Eythan Lam, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 7
Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz
2023 · Andrea Arias-Purdue, Matthew Guidry, et al. · IEEE Transactions on Microwave Theory and Techniques · 6
InP HBT Technologies for sub-THz Communications
2022 · M. Urteaga, Z. Griffith, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 4
Artificial Neural Networks for Power Match Modeling and Verification With a Novel D-Band Vector Load—Pull Bench
2023 · Andrea Arias-Purdue, Petra V. Rowell, et al. · IEEE Transactions on Microwave Theory and Techniques · 3
A 120-mW, Q-band InP HBT Power Amplifier with 46% Peak PAE
2020 · Andrea Arias-Purdue, Petra Rowell, et al. · IEEE MTT-S International Microwave Symposium digest · 2
Low-Noise and High-Survivability 55–65-GHz GaN MMIC LNA for Millimeter-Wave Communications
2025 · Michael Coffey, Cornelius Chin, et al. · IEEE Microwave and Wireless Technology Letters · 1
Reliable Graded-Channel GaN-on-SiC Technology With Record Performance up to 110 GHz
2026 · Andrea Arias-Purdue, Dan Denninghoff, et al. · IEEE Microwave and Wireless Technology Letters
Analysis of an Impedance‐Adaptive W‐Band GaN MMIC Power Amplifier
2026 · Stefan Stroessner, Laila Marzall, et al. · IET Microwaves Antennas & Propagation
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Future Prospect of β-Ga2O3: Materials, Devices and Circuit Applications
2023 · Andrea Arias-Purdue, Vivek Mehrotra, et al.
Works count: 17
Citation count: 734
H-index: 8
I10-index: 7
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