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C. S. Chang

k⋅p method for strained wurtzite semiconductors
1996 · S. L. Chuang, C. S. Chang · Physical review. B, Condensed matter · 1,060
A band-structure model of strained quantum-well wurtzite semiconductors
1997 · S L Chuang, C S Chang · Semiconductor Science and Technology · 309
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Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory
2021 · C.-Y. Liao, K.-Y. Hsiang, et al. · IEEE Electron Device Letters · 90
Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions
1996 · S. L. Chuang, C. S. Chang · Applied Physics Letters · 80
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
2020 · K.-Y. Hsiang, C.-Y. Liao, et al. · IEEE Transactions on Electron Devices · 57
A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications
2003 · C.C. Wu, Y.K. Leung, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 46
Advanced CMOS Technology Portfolio for RF IC Applications
2005 · C.-S. Chang, C.-P. Chao, et al. · IEEE Transactions on Electron Devices · 41
Pocket Implantation Effect on Drain Current Flicker Noise in Analog nMOSFET Devices
2004 · J.-W. Wu, C.-C. Cheng, et al. · IEEE Transactions on Electron Devices · 35
Analysis of temperature sensitivity in semiconductor lasers using gain and spontaneous emission measurements
1997 · W. Fang, M. Hattendorf, et al. · Applied Physics Letters · 14
The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips
2004 · D.D. Tang, W.C. Lin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Optical gain and refractive index of a laser amplifier in the presence of pump light for cross-gain and cross-phase modulation
1997 · T. Keating, J. Minch, et al. · IEEE Photonics Technology Letters · 13
How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology
2023 · H.-L. Chiang, R. A. Hadi, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 12
Correlation between Access Polarization and High Endurance (˜ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2
2022 · K.-Y. Hsiang, C.-Y. Liao, et al. · IEEE International Reliability Physics Symposium proceedings · 12
Impact of STI mechanical stress in highly scaled MOSFETs
2004 · Y.M. Sheu, C.S. Chang, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 12
Optical characterization of visible multiquantum-well semiconductor lasers by collection/excitation modes of scanning near-field optical microscopy
1999 · N. H. Lu, Din Ping Tsai, et al. · Applied Physics Letters · 12
Four-wave mixing in a distributed-feedback laser
1997 · J. Minch, C. S. Chang, et al. · Applied Physics Letters · 10
Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling
2005 · J.-W. Wu, J.-W. You, et al. · IEEE Transactions on Electron Devices · 9
Extended 0.13 μm CMOS technology for the ultra high-speed and MS/RF application segments
2003 · C.S. Chang, C.P. Chao, et al. · Symposium on VLSI Technology · 7
Impact of STI mechanical stress in highly scaled MOSFETs
2004 · Y.M. Sheu, C.S. Chang, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 6
A New FPGA-Implemented Neural Network for Compensating Degradation of AMOLED Displays in Real Time for Long Operation With Temperature Considered
2024 · Si-Fu Lin, Hao-Ren Chen, et al. · IEEE Transactions on Industrial Informatics · 5
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array
2022 · H. -L. Chiang, J.-F. Wang, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 5
Foundry technology for 130nm and beyond SoC
2004 · D.D. Tang, C.H. Diaz, et al. · Custom Integrated Circuits Conference · 4
MLC PCM Techniques to Improve Nerual Network Inference Retention Time by 105X and Reduce Accuracy Degradation by 10.8X
2021 · Win-San Khwa, K. Akarvardar, et al. · Symposium on VLSI Technology · 3
Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions
2009 · H.C. Ma, J.P. Chiu, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Wavelength conversion using distributed-feedback lasers
2005 · J. Minch, C.S. Chang, et al. · Conference on Lasers and Electro-Optics · 1
Works count: 30
Citation count: 1,859
H-index: 12
I10-index: 16
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