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Author

Manasa Ranjan Jena

Observed names: M. R. Jena, M.R. Jena
ORCID: 0000-0002-3412-3530
Observed ORCID: 0000-0002-3412-3530
OpenAlex ID: A5002014381
Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor
2020 · M. R. Jena, A. K. Panda, et al. · Microsystem Technologies · 3
Modeling and Optimization of Linearity in AlGaN/GaN Tri-Gate Fin-HEMTs Using Fin Configurations and Modulated Barrier Doping for Higher fT and fmax Using Small-Signal Analysis for RF Power Electronics Applications
2026 · Lakhmikanta Mishra, Kumud Ranjan, et al. · Russian Microelectronics · 2
Small-Signal Modeling of Transitional Recess T-Gate N-Doped Cap AlGaN/GaN Fin-HEMTs for High Linearity and f max
2026 · Lakhmikanta Mishra, Kumud Ranjan, et al. · IETE Journal of Research · 1
Impact of Ge Grading Profile on the Performance Characteristics of SiGe Heterojunction Bipolar Transistors
2021 · M. R. Jena, A. K. Panda, et al. · Devices for Integrated Circuit (DevIC) · 1
Effect of InGaAsP Cap-Layer in InP/InGaAs pnp δ-Doped Heterojunction Bipolar Transistor
2018 · M.R. Jena, A.K. Panda, et al. · 2018 IEEE Electron Devices Kolkata Conference (EDKCON) · 1
Drift and diffusion bipolar transistors: A review
2016 · Sarthak Mohapatra, M. R. Jena, et al. · International Conference on Devices, Circuits and Systems (ICDCS) · 1
Numerically Stable Small‐Signal Modeling of Highly Linear Composition‐Engineered AlGaN/GaN Fin‐HEMTs Using a Stabilized Berroth‐Based Extraction Methodology
2026 · Lakhmikanta Mishra, Kumud Ranjan, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields
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Optimization of Fin Wall Height for Transconductance Flatness in AlGaN/GaN Fin-HEMTs with Varying Fin Widths for RF Communication
2026 · Lakhmikanta Mishra, G. N. Dash, et al. · International Conference on Intelligent and Sustainable Electronics & Computing Technologies (INSECT)
A Review of GaN HEMT-Based Low Noise Amplifier (LNA) Design
2025 · G. Phani Kumar, Manasa Ranjan Jena · Lecture notes in networks and systems
DC Analysis of T Shape Gate, L Shape Gate, Y Shape Gate and Field-Plate Gate AlGaN/GaN Based HEMT
2024 · Lakhmikanta Mishra, G. N. Dash, et al. · IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
DC Analysis of Symmetrical and Asymmetrical T Gate AIGaN/GaN Based HEMT
2024 · Lakhmikanta Mishra, Manasa Ranjan Jena · IEEE International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC)
Novel materials-based devices to mitigate challenges
2023 · Sriyanka Behera, Gananath Dash, et al. · Elsevier eBooks
Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor
2021 · M. R. Jena, A. Diwarkar, et al. · International Journal of Electronics Letters
Analysis and Simulation of a High Efficiency InGaP/GaAs Single junction Solar Cell
2020 · Niharika Behera, Pruthviraj Panda, et al. · International Conference on Computational Intelligence for Smart Power System and Sustainable Energy (CISPSSE)
A Comparative Analysis InP/InGaAs ? Doped based NPN and PNP HBT
2019 · M. R. Jena, A.K. Panda, et al.
Works count: 16
Citation count: 9
H-index: 2
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