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Author

Hüseyin Tecimer

Observed names: H. Tecimer, Huseyin Tecimer
Institution: Karabük University
ORCID: 0000-0002-8211-8736
Observed ORCID: 0000-0002-8211-8736
OpenAlex ID: A5002165579
Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
2016 · O. Çiçek, H. Uslu Tecimer, et al. · Composites Part B Engineering · 93
On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
2013 · H. Tecimer, H. Uslu, et al. · Composites Part B Engineering · 89
Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)
2013 · H. Tecimer, A. Türüt, et al. · Sensors and Actuators A Physical · 87
Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures
2017 · O. Çiçek, H. Uslu Tecimer, et al. · Composites Part B Engineering · 77
Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
2016 · S. O. Tan, H. Uslu Tecimer, et al. · Journal of Materials Science Materials in Electronics · 69
Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures
2013 · H.G. Çetinkaya, H. Tecimer, et al. · Current Applied Physics · 68
Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
2013 · A. Kaya, Ö. Vural, et al. · Current Applied Physics · 65
Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky Diodes
2017 · Serhat Orkun Tan, Huseyin Tecimer, et al. · IEEE Transactions on Electron Devices · 49
Frequency-Dependent Admittance Analysis of the Metal–Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites
2017 · Huseyin Tecimer, Serhat Orkun Tan, et al. · IEEE Transactions on Electron Devices · 47
A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature
2013 · Sahar Alialy, Huseyin Tecimer, et al. · Journal of Nanomedicine & Nanotechnology · 43
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Schottky diode properties of CuInSe2 films prepared by a two-step growth technique
2012 · H. Tecimer, S. Aksu, et al. · Sensors and Actuators A Physical · 40
Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250W illumination level
2014 · Ş. Altındal, T. Tunç, et al. · Materials Science in Semiconductor Processing · 38
Capacitance/Conductance–Voltage–Frequency Characteristics of ${\rm Au}/{\rm PVC}+{\rm TCNQ}/{\rm p}\hbox{-}{\rm Si}$ Structures in Wide Frequency Range
2014 · Ahmet Kaya, Hüseyin Tecimer, et al. · IEEE Transactions on Electron Devices · 35
Illumination Dependent Electrical Data Identification of the CdZnO Interlayered Metal-Semiconductor Structures
2020 · S. O. Tan, İ. Taşcıoğlu, et al. · Silicon · 32
Materials Science in Semiconductor Processing
2014 · Ahmet Kaya, H. Tecimer · 32
Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
2016 · S. O. Tan, H. Uslu Tecimer, et al. · Journal of Materials Science Materials in Electronics · 30
Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications
2018 · Osman Çiçek, Serhat O. Tan, et al. · Journal of Electronic Materials · 27
Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures
2014 · İ. Yücedağ, A. Kaya, et al. · Materials Science in Semiconductor Processing · 27
A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer
2014 · A. Kaya, İ. Yücedağ, et al. · Materials Science in Semiconductor Processing · 23
Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)–zinc (Zn) doped organic interface layer
2017 · H. Tecimer, T. Tunç, et al. · Journal of Materials Science Materials in Electronics · 22
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
2023 · Ahmet Kaymaz, Esra Evcin Baydilli, et al. · Materials Today Communications · 21
On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures
2018 · Hüseyin Tecimer · Journal of Materials Science Materials in Electronics · 15
Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures
2014 · A. Kaya, S. Demirezen, et al. · Advances in Polymer Technology · 15
The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)
2020 · E. Evcin Baydilli, Ş. Altındal, et al. · Journal of Materials Science Materials in Electronics · 11
Interpretation of barrier height inhomogeneities in Au/In2S3/SnO2/(In-Ga) structures at low temperatures
2017 · H. Tecimer, Ş. Altındal, et al. · Journal of Materials Science Materials in Electronics · 10
Works count: 30
Citation count: 1,083
H-index: 21
I10-index: 25
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