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A. Bhouri

Observed names: A Bhouri, Amel Bhouri, Bhouri, A.
OpenAlex ID: A5002261768
Electronic band parameters for zinc-blende Al1$minus$xGaxN
2002 · A Bhouri, F Ben Zid, et al. · Journal of Physics Condensed Matter · 27
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Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures
2002 · F. Ben Zid, A. Bhouri, et al. · Journal of Applied Physics · 26
Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode
2015 · A. Rached, A. Bhouri, et al. · Superlattices and Microstructures · 17
Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures
2015 · A Bhouri, A Rached, et al. · Journal of Physics D Applied Physics · 12
Wave function engineering in W designed strained-compensated Si/Si1−xGex/Si type II quantum wells for 1.55μm optical properties
2004 · N. Sfina, J.-L. Lazzari, et al. · Optical Materials · 11
Electronic structure and optical properties of Si1−xGex alloys
2002 · F. Ben Zid, A. Bhouri, et al. · Physica B Condensed Matter · 11
Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1 xN
2004 · A Bhouri, H Mejri, et al. · Journal of Physics Condensed Matter · 10
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Composition dependence of the band offsets in wurtzite nitride-based heterojunctions
2015 · Amel Bhouri, Jean-Louis Lazzari · Materials Science in Semiconductor Processing · 8
Effect of nitrogen concentration on the electronic and vibrational properties of zinc-blende InNxP1-x(x < 0.01)
2006 · M. Debbichi, A. Ben Fredj, et al. · The European Physical Journal B · 5
Band offset calculations applied to III–V nitride quantum well device engineering
2004 · A. Bhouri, A. Ben Fredj, et al. · Superlattices and Microstructures · 5
Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region
2012 · Kechiantz, A., Afanasev, A., et al. · arXiv (Cornell University) · 4
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Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications
2007 · M. Debbichi, A. Ben Fredj, et al. · Materials Science and Engineering C · 4
Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure
2002 · H. Mejri, F. Ben Zid, et al. · Physica B Condensed Matter · 4
A theoretical study of band structure properties for III–V nitrides quantum wells
2011 · S. Ben Rejeb, A. Bhouri, et al. · Superlattices and Microstructures · 2
Electrical field and temperature effects in 2D‐2D resonant tunneling diodes based on cubic InGaN/AlGaN
2011 · A. Bhouri, N. Yahyaoui, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2
Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes
2021 · Nafaa Kacem, Amel Bhouri, et al. · IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS) · 1
A Systematic Study of Composition-Dependent Band Offsets at Strained (In)GaAs(N)/GaAs Heterointerfaces for Optoelectronic Applications
2026 · A. Bhouri · Journal of Experimental and Theoretical Physics
Efficiency limit of AlGaAs solar cell modified by AlGaSb quantum dot intermediate band embedded outside the depletion region
2012 · Kechiantz, A., Afanasev, A., et al. · HAL
A novel quantum laser structure based on InAsN/GaSb system
2007 · M. Debbichi, A. Ben Fredj, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission.
2006 · Debbichi, M., A. Ben, Fredj, et al. · HAL
Electronic structure calculations for Si/Si1−xGex multi-quantum well devices
2003 · F Ben Zid, A Bhouri, et al. · Materials Science and Engineering C
Works count: 22
Citation count: 149
H-index: 8
I10-index: 7
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