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Tsubasa Shiono
Institution:
Resonac (Japan)
Observed institutions:
Resonac (Japan),
The University of Tokyo
ORCID:
0009-0006-5440-5531
Observed ORCID:
0009-0006-5440-5531
OpenAlex ID:
A5002288986
Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers
2024
·
Fumihiro Fujie
, Tsubasa Shiono
, et al.
·
Journal of Applied Physics
·
13
Characterization and modeling of forward current conduction in 4H-SiC PiN diodes based on device simulation analysis
2026
·
Satoshi Asada
, Koichi Murata
, et al.
·
Journal of Applied Physics
Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
2024
·
Yoshitaka Nishihara
, Tsubasa Shiono
, et al.
·
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum
PDF
Direct measurements of electrocaloric effect in acceptor doped BaTiO 3 ceramics
2019
·
Tsubasa Shiono
, Yuji Noguchi
, et al.
·
The Japan Society of Applied Physics
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Works count:
4
Citation count:
13
H-index:
1
I10-index:
1
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