Author

R.P. Arrowsmith

Observed names: R P Arrowsmith, R. Arrowsmith, R. P. Arrowsmith

Observed institutions: BT Research, University of Surrey

OpenAlex ID: A5002633029

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

1984 · C. G. Tuppen, M. R. Taylor, et al. · Applied Physics Letters · 71

High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

1985 · P. L. F. Hemment, R. F. Peart, et al. · Applied Physics Letters · 58

SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

1985 · J.A. Kilner, R.J. Chater, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 48

Silicon on insulator structures formed by the implantation of high doses of reactive ions

1985 · P.L.F. Hemment, R.F. Peart, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 28

Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation

1986 · S. Cristoloveanu, J. H. Lee, et al. · Journal of Applied Physics · 27

SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N

1986 · J.A. Kilner, R.J. Chater, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 24

Thermal donor and new donor generation in SOI material formed by oxygen implantation

1985 · S. Cristoloveanu, J. Pumfrey, et al. · Electronics Letters · 24

The effects of different implantation and annealing temperatures on the structural and chemical properties of high dose oxygen-ion-implanted silicon

1985 · C.G. Tuppen, M.R. Taylor, et al. · Thin Solid Films · 19

Temperature dependence of Hall mobility and electrical conductivity in SIMOX films

1984 · J. Wyncoll, K.N. Kang, et al. · Electronics Letters · 9

Precipitation of oxygen in single-crystal silicon implanted with high doses of oxygen

1985 · P.L.F. Hemment, E.A. Maydell-Ondrusz, et al. · Thin Solid Films · 8

Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation

1985 · S. Cristoloveanu, J. Wyncoll, et al. · Physica B+C · 7

Computer simulation of high dose reactive-ion implants into silicon

1983 · R. M. Dobson, R. P. Arrowsmith, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 2