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Burcu Arpapay

Observed name: B. Arpapay
ORCID: 0000-0002-0784-560X
Observed ORCID: 0000-0002-0784-560X
OpenAlex ID: A5002634993
Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy
2019 · Uğur Serincan, Burcu Arpapay · Semiconductor Science and Technology · 17
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A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy
2020 · Burcu Arpapay, Y Eren Suyolcu, et al. · Semiconductor Science and Technology · 10
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The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates
2020 · B. Arpapay, U. Serincan · Superlattices and Microstructures · 5
The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number
2022 · F. Sonmez, S. Ardali, et al. · Physica B Condensed Matter · 4
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
2014 · B. Arpapay, S. Şahin, et al. · Thin Solid Films · 4
Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy
2020 · Burcu Arpapay, Özgür Duygulu, et al. · Materials Science in Semiconductor Processing · 3
Convex-like GaAs nanowires grown on Si (111) substrates
2019 · Burcu Arpapay, Uğur Serincan · Materials Science in Semiconductor Processing · 3
A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga 1-x Mn x As/AlAs quantum wells (QWs) grown on various orientations by MBE
2015 · M. Gunes, O. Erken, et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics · 2
Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure
2025 · Feyza Sonmez, Sukru Ardali, et al. · Applied Physics A · 1
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Random alloy growth of AlAs0.08Sb0.92 on GaSb under high Group-V flux condition
2024 · Burcu Arpapay, Ayşe Aygül Ergürhan, et al. · Materials Science in Semiconductor Processing · 1
Effect of tilt angle and drying temperature on the surface coverage rate of polystyrene nanospheres in evaporation-driven self-assembly process
2024 · Ayşe Aygül Ergürhan, Onur Şenel, et al. · Journal of Micro/Nanopatterning Materials and Metrology · 1
Structural and Optical Properties of Electrochemically Grown Fluorine Doped Zinc Oxide Rods
2014 · Pinar Bilgic Ozden, Andac Arslan, et al. · Journal of Nanoelectronics and Optoelectronics · 1
Properties of one-step sputtered Al- and V-doped titanium oxide thin films for infrared sensing applications
2026 · Özlem Başak Özkan Kolcubaşı, Ramis Mustafa Öksüzoğlu, et al. · Ceramics International
Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy
2025 · Ayşe Aygül Ergürhan, Burcu Arpapay, et al. · Journal of Crystal Growth
Highly ordered polystyrene nanospheres by self-assembly method
2025 · Elif Yılmaz, Ayşe Aygül Ergürhan, et al. · Journal of Micro/Nanopatterning Materials and Metrology
Light Logic Gates with GaAs‐Based Structures
2024 · Feyza Sonmez, Sukru Ardali, et al. · physica status solidi (RRL) - Rapid Research Letters
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Light Logic Gates with GaAs‐Based Structures
2024 · Feyza Sonmez, Sukru Ardali, et al. · physica status solidi (RRL) - Rapid Research Letters
MBEによる様々な配向で成長した,MnフリーGaAs/AlAsおよびMn含有Ga1-xMnxAs/AlAs量子井戸(QW)に関するフォトルミネッセンスによる比較研究
2016 · M. Güneş, O. Erken, et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics
Characterization of a multilayer GaAs/AlGaAs broadband quantum well infrared photodetectors
2010 · Hülya Kuru, Burcu Arpapay, et al.
GaAs/AlGaAs tabanlı yarıiletken yapılardan aygıt üretimi ve karakterizasyonu
2010 · Burcu Arpapay
Works count: 20
Citation count: 52
H-index: 4
I10-index: 2
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