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Ali Obaid Radam

Observed names: Ali O. Radam, Али Обаид Радам, Радам Али
ORCID: 0000-0002-1072-0816
Observed ORCID: 0000-0002-1072-0816
OpenAlex ID: A5003165138
MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates
2022 · Aleksandr Lenshin, Pavel Seredin, et al. · Coatings · 4
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Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation
2022 · P.V. Seredin, Dmitry Goloshchapov, et al. · Optical Materials · 4
Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates
2023 · P.V. Seredin, D.L. Goloshchapov, et al. · Optical Materials · 2
Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
2023 · P. V. Seredin, N. A. Kurilo, et al. · Конденсированные среды и межфазные границы · 1
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon
2022 · P. V. Seredin, Ali Obaid Radam, et al. · Semiconductors · 1
Effect and study of the base temperature on the structural and optical properties of zinc oxide films prepared by thermal evaporation method in a vacuum.
2022 · Zainab S. Abdul-Ridha, Ali O. Radam · AIP conference proceedings · 1
Properties of Compliant Substrates Based on Porous Silicon Formed by Two-stage Etching
2022 · P. V. Seredin, A. S. Len’shin, et al. · Semiconductors
Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer
2022 · Александр Сергеевич Леньшин, Павел Владимирович Середин, et al. · Конденсированные среды и межфазные границы
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Рост тонкопленочных AlGaN/GaN эпитаксиальных гетероструктур на гибридных подложках, содержащих слои карбида кремния и пористого кремния
2022 · П.В. Середин, Али Обаид Радам, et al. · Физика и техника полупроводников
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Works count: 9
Citation count: 13
H-index: 2
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