Get started
Author

Rami Khazaka

GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
2019 · Jérémie Chrétien, Nicolas Pauc, et al. · ACS Photonics · 165
Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling
2022 · C. Porret, J.-L. Everaert, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
Silver versus white sheet as a back reflector for microcrystalline silicon solar cells deposited on LPCVD‐ZnO electrodes of various textures
2014 · Rami Khazaka, Etienne Moulin, et al. · Progress in Photovoltaics Research and Applications · 20
Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates
2018 · Rami Khazaka, Emmanuel Nolot, et al. · Semiconductor Science and Technology · 18
Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy
2020 · Erik Rosseel, Clement Porret, et al. · ECS Transactions · 15
PDF
Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
2015 · Rami Khazaka, Marc Portail, et al. · Acta Materialia · 15
Source/Drain Epitaxy for Nanosheet-Based CFET Devices
2024 · Erik Rosseel, Clement Porret, et al. · ECS Transactions · 12
PDF
Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate
2015 · Rami Khazaka, Emilie Bahette, et al. · Materials Letters · 10
Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows
2018 · Rami Khazaka, Joris Aubin, et al. · ECS Transactions · 9
PDF
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes
2017 · Rami Khazaka, Jean François Michaud, et al. · Applied Physics Letters · 9
300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures
2022 · Haiwen Xu, Rami Khazaka, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 8
Epitaxial Growth of Ga-doped SiGe for Reduction of Contact Resistance in finFET Source/Drain Materials
2019 · Joe Margetis, David Kohen, et al. · ECS Transactions · 8
PDF
Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect
2015 · Rami Khazaka, Marc Portail, et al. · Materials science forum · 7
Low Temperature Selective Epitaxy of Group-IV Semiconductors for Nanoelectronics
2022 · Rami Khazaka, Brendan Marozas, et al. · ECS Transactions · 6
Vertical GeSn electro-absorption modulators grown on Silicon for the mid-infrared
2020 · M. Bertrand, L. Casiez, et al. · IEEE Photonics Conference · 6
Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity
2020 · Haiwen Xu, Jishen Zhang, et al. · Symposium on VLSI Technology · 6
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
2016 · Rami Khazaka, Marius Grundmann, et al. · Applied Physics Letters · 6
Hybrid Channel monolithic-CFET with Si (110) pMOS and (100) nMOS
2025 · A. Vandooren, S. Iacovo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature
2023 · Gerui Zheng, Yuxuan Wang, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 5
On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction
2016 · Rami Khazaka, Jean-François Michaud, et al. · Journal of Applied Physics · 5
Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain
2025 · R. Sarkar, D. Casey, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4
PDF
Defect-Free SiGe/Si Multistacks for Next-Generation CFET Architectures
2024 · Gianluca Rengo, Daniel Casey, et al. · ECS Transactions · 4
PDF
Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%
2019 · M. Bertrand, J. M. Hartmann, et al. · IEEE International Conference on Group IV Photonics (GFP) · 4
Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
2022 · Marc Portail, Sébastien Chenot, et al. · Materials science forum · 3
PDF
Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%
2019 · J. Aubin, A. Quintero, et al. · IEEE International Conference on Group IV Photonics (GFP) · 3
Works count: 65
Citation count: 401
H-index: 9
I10-index: 8
Year
Topic
Type