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Ludovic Largeau

Optical spectroscopy of two-dimensional layered (C_6H_5C_2H_4-NH_3)_2-PbI_4 perovskite
2010 · K. Gauthron, J-S. Lauret, et al. · Optics Express · 293
Epitaxy of GaN Nanowires on Graphene
2016 · Vishnuvarthan Kumaresan, Ludovic Largeau, et al. · Nano Letters · 146
Surface-acoustic-wave-driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers
2014 · L. Thevenard, C. Gourdon, et al. · Physical Review B · 138
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Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
2001 · R. Teissier, D. Sicault, et al. · Journal of Applied Physics · 130
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
2000 · J. C. Harmand, G. Ungaro, et al. · Applied Physics Letters · 117
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
2008 · L Largeau, D L Dheeraj, et al. · Nanotechnology · 104
GaNAsSb: how does it compare with other dilute III V-nitride alloys?
2002 · J-C Harmand, A Caliman, et al. · Semiconductor Science and Technology · 101
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Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)
2006 · G. Delhaye, C. Merckling, et al. · Journal of Applied Physics · 91
Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping
2015 · M. Tchernycheva, V. Neplokh, et al. · Nanoscale · 90
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N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)
2012 · Ludovic Largeau, Elisabeth Galopin, et al. · Crystal Growth & Design · 84
Correlation of optical and structural properties of GaN/AlN core-shell nanowires
2011 · L. Rigutti, G. Jacopin, et al. · Physical Review B · 83
Recent advances in germanium emission [Invited]
2013 · P. Boucaud, M. El Kurdi, et al. · Photonics Research · 82
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
2011 · G. Jacopin, L. Rigutti, et al. · Journal of Applied Physics · 79
Universal description of III-V/Si epitaxial growth processes
2018 · I. Lucci, S. Charbonnier, et al. · Physical Review Materials · 76
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Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers
2008 · A. Lemaître, A. Miard, et al. · Applied Physics Letters · 75
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Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
2011 · E Galopin, L Largeau, et al. · Nanotechnology · 74
Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys
2010 · M. Cubukcu, H. J. von Bardeleben, et al. · Physical Review B · 73
Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying
2008 · Gilles Patriarche, Frank Glas, et al. · Nano Letters · 72
High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
2011 · R. Jakomin, M. de Kersauson, et al. · Applied Physics Letters · 69
Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties
2010 · A. Ouerghi, M. Marangolo, et al. · Physical Review B · 69
Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
2006 · L. Thevenard, L. Largeau, et al. · Physical Review B · 68
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Piezo-generator integrating a vertical array of GaN nanowires
2016 · N Jamond, P Chrétien, et al. · Nanotechnology · 67
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Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires
2010 · J.-M. Jancu, K. Gauthron, et al. · Applied Physics Letters · 67
Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)
2010 · A. Ouerghi, R. Belkhou, et al. · Applied Physics Letters · 66
Metamorphic approach to single quantum dot emission at 1.55μm on GaAs substrate
2008 · E. S. Semenova, R. Hostein, et al. · Journal of Applied Physics · 65
Works count: 350
Citation count: 5,932
H-index: 44
I10-index: 140
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