Get started
Author

Anup Gorai

Observed name: Gorai Anup
ORCID: 0000-0002-2096-6019
Observed ORCID: 0000-0002-2096-6019
OpenAlex ID: A5004062302
Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output
2017 · Anup Gorai, Siddhartha Panda, et al. · Optik · 20
Constructive and comprehensive studies on the advantages of using staggered In x Ga 1-x N/In y Ga 1-y N QWs in LEDs
2017 · Dipankar Biswas, Apu Mistry, et al. · Optical Materials · 20
Red light emitting diodes based on the type-II InGaN-ZnSnN2/GaN quantum wells
2018 · Anup Gorai · Materials Science in Semiconductor Processing · 18
The overlap of electron and hole wavefunctions in the InxGa1-xN/GaN graded quantum well LED is much superior to the symmetrically staggered: Even to that of a trapezoidal quantum well
2019 · Anup Gorai · Optik · 13
The electron–hole overlap in the parabolic quantum well light emitting diode is much superior to the rectangular: even to that of a staggered quantum well
2019 · Apu Mistry, Anup Gorai, et al. · Optical and Quantum Electronics · 12
A tunable LED based on InGaN-ZnSnN2/GaN QW in the infrared range, for optical communications
2017 · Anup Gorai, Dipankar Biswas · Optik · 10
Near-infrared light emitting diodes based on the type-II InGaN-ZnSnN2/GaN quantum wells
2018 · Anup Gorai · Optical Materials · 9
Inclusion of Indium, with doping in the barriers of InxGa1-xN/InyGa1-yN quantum wells reveals striking modifications of the emission properties with current for better operation of LEDs
2017 · Anup Gorai, Apu Mistry, et al. · Photonics and Nanostructures - Fundamentals and Applications · 7
Constructive studies on the advantages of using Ga- and N-face polarities in conventional and staggered InGaN/GaN QW LEDs
2020 · Anup Gorai · Optical Materials · 3
Incorporation of ZnSnN₂ and InN δ-layers in InGaN/GaN Quantum Wells: Toward efficient long-wavelength III-nitride LEDs
2026 · Anup Gorai · Photonics and Nanostructures - Fundamentals and Applications · 2
A multispectral linear optical sweep source, based on tunable InGaN/GaN QW LEDs
2017 · Dipankar Biswas, Anup Gorai, et al. · Optik · 2
Green Light-Emitting Diodes Based on InGaN/GaN Quantum Wells Incorporating an Ultrathin InN-delta Layer
2026 · Anup Gorai · Physics of the Solid State
Non uniform distribution of indium in the In Ga N/GaN quantum well is more advantageous for quantum well light emitting diodes
2017 · Anup Gorai, Apu Mistry, et al. · Optik
LEDにおけるスタガードIn_xGa_1xN/In_yGa_1 yN量子井戸を使用することの利点に関する構成的および包括的研究【Powered by NICT】
2017 · Biswas Dipankar, Mistry Apu, et al. · Optical Materials
Works count: 14
Citation count: 116
H-index: 7
I10-index: 6
Year
Topic
Type