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Toshiyuki Sameshima

XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
1986 · T. Sameshima, S. Usui, et al. · IEEE Electron Device Letters · 448
XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs
1985 · T. Sameshima, M. Sekiya, et al. · International Conference on Solid State Devices and Materials (SSDM) · 355
XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's
1989 · Toshiyuki Sameshima, Masaki Hara, et al. · Japanese Journal of Applied Physics · 198
High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing
1995 · A. Kohno, T. Sameshima, et al. · IEEE Transactions on Electron Devices · 154
Pulsed laser-induced amorphization of silicon films
1991 · T. Sameshima, S. Usui · Journal of Applied Physics · 93
Pulsed laser-induced melting followed by quenching of silicon films
1993 · T. Sameshima, S. Usui · Journal of Applied Physics · 80
Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions
1987 · T. Sameshima, S. Usui, et al. · Journal of Applied Physics · 77
Improvement of SiO 2 Properties by Heating Treatment in High Pressure H 2O Vapor
1997 · Toshiyuki Sameshima Toshiyuki Sameshima, Mitsuru Satoh Mitsuru Satoh · Japanese Journal of Applied Physics · 73
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Analysis of Microwave Absorption Caused by Free Carriers in Silicon
2009 · Toshiyuki Sameshima, Hiromi Hayasaka, et al. · Japanese Journal of Applied Physics · 64
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Electrical properties for poly-Ge films fabricated by pulsed laser annealing
2005 · Hajime Watakabe, Toshiyuki Sameshima, et al. · Thin Solid Films · 63
Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing
2004 · H. Watakabe, T. Sameshima, et al. · Journal of Applied Physics · 63
Mechanism of pulsed laser-induced amorphization of silicon films
1991 · T. Sameshima, S. Usui · Applied Physics Letters · 55
High quality SiO/sub 2//Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere
1995 · N. Sano, M. Sekiya, et al. · IEEE Electron Device Letters · 50
Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
2001 · Seiichiro Higashi, Toshiyuki Sameshima · Japanese Journal of Applied Physics · 49
Experimental Study of the Hyper-Raman Scattering Due to Raman Inactive Lattice Vibration in SrTiO3
1981 · Kuon Inoue, Nobutoshi Asai, et al. · Journal of the Physical Society of Japan · 49
Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
2011 · Toshiyuki Sameshima, Jun Takenezawa, et al. · Japanese Journal of Applied Physics · 47
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Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
1989 · Toshiyuki Sameshima, Masaki Hara, et al. · Japanese Journal of Applied Physics · 46
XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts
1986 · T. Sameshima, S. Usui · MRS Proceedings · 46
Heat Treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films
2000 · Katsumi Asada Katsumi Asada, Keiji Sakamoto Keiji Sakamoto, et al. · Japanese Journal of Applied Physics · 42
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SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors
1994 · T. Sameshima, A. Kohno, et al. · Applied Physics Letters · 39
Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
2004 · Seiichiro Higashi, Hirotaka Kaku, et al. · Japanese Journal of Applied Physics · 35
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Passivation of SiO2/Si Interfaces Using High-Pressure-H2O-Vapor Heating
2000 · Keiji Sakamoto Keiji Sakamoto, Toshiyuki Sameshima Toshiyuki Sameshima · Japanese Journal of Applied Physics · 35
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Mechanical Stacking Multi Junction Solar Cells Using Transparent Conductive Adhesive
2014 · Shinya Yoshidomi, Jun Furukawa, et al. · Energy Procedia · 34
Electrical Properties of Pulsed Laser Crystallized Silicon Films
1999 · Toshiyuki Sameshima Toshiyuki Sameshima, Keiko Saitoh Keiko Saitoh, et al. · Japanese Journal of Applied Physics · 34
Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
2000 · Yoshiyuki Tsunoda Yoshiyuki Tsunoda, Toshiyuki Sameshima Toshiyuki Sameshima, et al. · Japanese Journal of Applied Physics · 33
Works count: 302
Citation count: 3,819
H-index: 31
I10-index: 84
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