Author

S. Yamaura

Observed names: S YAMAURA, S Yamaura, S. I. Yamaura, Shinji Yamaura, Yamaura, Shinji

Institution: Mirise Technologies Corporation (Japan)

Observed institutions: Tokyo Institute of Technology, Tohoku University, Kyoto University, Fujitsu (Japan), Japan Synchrotron Radiation Research Institute, Denso (Japan), Spring-8 (Japan), Institute for Materials Research, Tohoku University, Kyoto University Institute for Chemical Research, Mirise Technologies Corporation (Japan), Fujitsu Semiconductor (Japan), The University of Osaka

ORCID: 0000-0001-9632-5325

Observed ORCID: 0000-0001-9632-5325

OpenAlex ID: A5004334095

The effect of grain boundary microstructure on Barkhausen noise in ferromagnetic materials

2001 · S Yamaura, Y Furuya, et al. · Acta Materialia · 131

Structure-dependent intergranular oxidation in Ni–Fe polycrystalline alloy

1999 · S. Yamaura, Y. Igarashi, et al. · Acta Materialia · 90

A 77-GHz 8RX3TX Transceiver for 250-m Long-Range Automotive Radar in 40-nm CMOS Technology

2021 · Tomoyuki Arai, Tatsunori Usugi, et al. · IEEE Journal of Solid-State Circuits · 86

Local atomic structure around Ni, Nb, and Zr atoms in Ni–Nb–Zr–H glassy alloys studied by x-ray absorption fine structure method

2009 · H. Oji, K. Handa, et al. · Journal of Applied Physics · 33

A hydrogen sensor based on Mg–Pd alloy thin film

2007 · K Yoshimura, S Nakano, et al. · Measurement Science and Technology · 31

A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets

2012 · Kouichi Kanda, Yoichi Kawano, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 29

Hydrogen absorption in Ti–Zr–Ni–Cu amorphous alloy

2002 · X.Q Guo, D.V Louzguine, et al. · Materials Science and Engineering A · 25

Hydrogen Permeable Nb-Based Amorphous Alloys with High Thermal Stability

2013 · H. Y. Ding, W. Zhang, et al. · MATERIALS TRANSACTIONS · 24

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A 77 GHz 8RX3TX transceiver for 250 m long range automotive radar in 40 nm CMOS technology

2020 · Tatsunori Usugi, Tomotoshi Murakami, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 21

Hydrogen-induced internal friction of Zr-based bulk glassy alloys in a rod shape above 90 K

2003 · M. Hasegawa, K. Kotani, et al. · Journal of Alloys and Compounds · 19

A 9 dB Noise Figure Fully Integrated 79 GHz Automotive Radar Receiver in 40 nm CMOS Technology

2019 · Tomotoshi Murakami, Nobumasa Hasegawa, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 17

A real-time temperature-compensated CMOS RF on-chip power detector with high linearity for wireless applications

2012 · Hiroyuki Nakamoto, Masahiro Kudo, et al. · European Solid-State Circuits Conference (ESSCIRC) · 16

A 50-Gbit/s 450-mW Full-Rate 4:1 Multiplexer With Multiphase Clock Architecture in 0.13-$\mu{\hbox {m}}$ InP HEMT Technology

2007 · Toshihide Suzuki, Yoichi Kawano, et al. · IEEE Journal of Solid-State Circuits · 16

Damping properties of hydrogen-absorbed rod metallic glasses

2003 · M Hasegawa, S Yamaura, et al. · Journal of Alloys and Compounds · 16

3.2 A 1.95GHz fully integrated envelope elimination and restoration CMOS power amplifier with envelope/phase generator and timing aligner for WCDMA and LTE

2014 · Kazuaki Oishi, Eiji Yoshida, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 14

Mechanical Properties of Melt-Spun Amorphous Ni-Nb-Zr Alloys after Hydrogen Charging

2006 · Asahi Kawashima, Shinji Yamaura, et al. · MATERIALS TRANSACTIONS · 14

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Stability and hydrogen-induced internal friction of Ti-rich multicomponent glassy alloys

2003 · M Hasegawa, M Takeuchi, et al. · Journal of Alloys and Compounds · 13

Thermal Stability and Hydrogen Permeation of Ni42Zr30Nb28−xTax Amorphous Alloys

2009 · J. B. Qiang, W. Zhang, et al. · MATERIALS TRANSACTIONS · 11

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A 50-Gbit/s 1:4 demultiplexer IC in InP-based HEMT technology

2003 · H. Kano, T. Suzuki, et al. · IEEE MTT-S International Microwave Symposium digest · 10

High current gain GaInAs/InP hot electron transistor

1990 · S. Yamaura, Y. Miyamoto, et al. · Electronics Letters · 10