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Author

Geunho Yoo

Observed name: Yoo, Geunho
Observed institution: Tech University of Korea
OpenAlex ID: A5004568960
Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate
2021 · Taemyung Kwak, Jonggun Lee, et al. · Diamond and Related Materials · 32
A Nonpolar a-Plane GaN Grown on a Hemispherical Patterned r-Plane Sapphire Substrate
2011 · Geunho Yoo, Hyunsung Park, et al. · Japanese Journal of Applied Physics · 16
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Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition
2020 · Taemyung Kwak, Jonggun Lee, et al. · physica status solidi (a) · 13
Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate
2023 · Sanghun Han, Taemyung Kwak, et al. · physica status solidi (a) · 11
Defect reduction of SiN x embedded m -plane GaN grown by hydride vapor phase epitaxy
2014 · Seohwi Woo, Minho Kim, et al. · Journal of Crystal Growth · 11
Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates
2025 · Taemyung Kwak, Yoonseok Nam, et al. · Diamond and Related Materials · 9
Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates
2013 · Bo Hyun Kong, Byung Oh. Jung, et al. · Thin Solid Films · 7
Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition
2011 · Geunho Yoo, Hyunsung Park, et al. · Current Applied Physics · 5
Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition
2021 · Jonggeon Lee, Taemyung Kwak, et al. · Journal of Nanoscience and Nanotechnology · 4
Correlation between luminescence and defects in nonpolar and semipolar InGaN/GaN quantum wells on planar and patterned sapphire substrates
2014 · Seunga Lee, Geunho Yoo, et al. · Electronic Materials Letters · 4
A Nonpolara-Plane GaN Grown on a Hemispherical Patternedr-Plane Sapphire Substrate
2011 · Geunho Yoo, Hyunsung Park, et al. · Japanese Journal of Applied Physics · 4
Twin-free (111) single-crystal diamond heteroepitaxially grown on (1-102) sapphire substrate
2025 · Taemyung Kwak, Seolyoung Oh, et al. · Diamond and Related Materials · 3
High-quality a-plane (11–20) GaN growth using double-lens structure on r-plane sapphire
2013 · Daehong Min, Geunho Yoo, et al. · Journal of Crystal Growth · 3
Heteroepitaxial growth of (100) single-crystal diamond with reduced wafer bow via SiO₂ Nanospheres interlayer
2026 · Min Yoon, Taemyung Kwak, et al. · Diamond and Related Materials · 2
Normally-off Al/HfO2/Al-gated diamond field effect transistor on a heteroepitaxial diamond substrate
2025 · Yoonseok Nam, Taemyung Kwak, et al. · Diamond and Related Materials · 2
Improved Performance of (1122) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO2 Mask
2013 · Daehong Min, Geunho Yoo, et al. · Japanese Journal of Applied Physics · 2
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Characterization of a-plane InGaN light-emitting diodes with a SiNx interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition
2014 · Geunho Yoo, Daehong Min, et al. · Japanese Journal of Applied Physics · 1
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Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m-Sapphire
2013 · Yongwoo Ryu, Joocheol Jeong, et al. · Journal of Nanoscience and Nanotechnology · 1
Heteroepitaxial growth of twin-free (111) diamond on misoriented r-plane sapphire substrate with controlled misorientation direction
2026 · Seolyoung Oh, Taemyung Kwak, et al. · Diamond and Related Materials
Supplement
2026 · Nam, Yoonseok, Kwak, Taemyung, et al. · AIP Publishing
Gamma-ray radiation hardness of Ir contacts in H-terminated diamond MESFETs
2026 · Yoonseok Nam, Taemyung Kwak, et al. · Applied Physics Letters
Gamma-ray radiation hardness of Ir contacts in H-terminated diamond MESFETs
2026 · Yoo, Geunho, Kim, Dong-Seok, et al. · AIP Publishing
Depletion-Mode and Enhancement-Mode Diamond Mosfets Fabricated on the Same Heteroepitaxial Diamond Substrates
2024 · Kwak Taeyeong, Yoonseok Nam, et al. · SSRN Electronic Journal
Improved Performance of (1122) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO₂ Mask (Special Issue : Electronic Materials and Nanotechnology for Green Environment)
2013 · Daehong Min, Geunho Yoo, et al. · Japanese Journal of Applied Physics
Structural Investigation fo Carbon Nanotubes Grown by Plasma-Enhanced Hot Filament Chemical Vapor Deposition
2000 · G S Park, N S Lee, et al. · 電子顕微鏡
Works count: 25
Citation count: 130
H-index: 7
I10-index: 5
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