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S. Petersson

The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon
1981 · H. Norde, J. de Sousa Pires, et al. · Applied Physics Letters · 164
Diffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films
1982 · F. d’Heurle, S. Petersson, et al. · Journal of Applied Physics · 129
Formation of iridium silicides from Ir thin films on Si substrates
1979 · S. Petersson, J. Baglin, et al. · Journal of Applied Physics · 124
The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment
1979 · J. Baglin, J. Dempsey, et al. · Journal of Electronic Materials · 76
Formation of wide and deep pores in silicon by electrochemical etching
2000 · P Kleimann, J Linnros, et al. · Materials Science and Engineering B · 64
Characterization of 3D thermal neutron semiconductor detectors
2007 · J. Uher, C. Fröjdh, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 62
An alternative marker experiment in the formation of Mo and W silicides
1978 · J. Baglin, F. d’Heurle, et al. · Applied Physics Letters · 62
An interface — marker technique applied to the study of metal silicide growth
1980 · J.E.E. Baglin, F.M. D'Heurle, et al. · Nuclear Instruments and Methods · 61
Studies of formation of silicides and their barrier heights to silicon
1973 · K. E. Sundström, S. Petersson, et al. · physica status solidi (a) · 61
The thin-film formation of rhodium silicides
1980 · S. Petersson, R. Anderson, et al. · Journal of Applied Physics · 57
Nucleation-controlled thin-film interactions: Some silicides
1979 · R. Anderson, J. Baglin, et al. · Applied Physics Letters · 54
Observations of stresses in thin films of palladium and platinum silicides on silicon
1980 · J. Angilello, F. d’Heurle, et al. · Journal of Vacuum Science and Technology · 45
IrSi1.75 a new semiconductor compound
1982 · S. Petersson, J. A. Reimer, et al. · Journal of Applied Physics · 44
Schottky-barrier height of iridium silicide
1978 · I. Ohdomari, K. N. Tu, et al. · Applied Physics Letters · 39
Comparison of back-scattering parameters using high energy oxygen and helium ions
1973 · S. Petersson, P.A. Tove, et al. · Thin Solid Films · 37
Measurements of the rectifying barrier heights of the various iridium silicides with n-Si
1979 · J. de Sousa Pires, P. Ali, et al. · Applied Physics Letters · 30
Measurements of the rectifying barrier heights of various rhodium silicides with n-silicon
1980 · J. de Sousa Pires, F. d’Heurle, et al. · Applied Physics Letters · 26
Oxygen distribution profiles in thin evaporated contacts on single crystal silicon
1978 · Sture Petersson, Herman Norde, et al. · Nuclear Instruments and Methods · 20
Formation of ultra-thin buried CoSi2 layers by ion implantation in (100) Si
1991 · Karen Maex, Jan Vanhellemont, et al. · Applied Surface Science · 17
Silicide formation correlated with surface resistivity measurements
1976 · S. Petersson, E. Mgbenu, et al. · physica status solidi (a) · 14
Titanium Disilicide in MOS Technology
1982 · F Runovc, H Norström, et al. · Physica Scripta · 12
Ion backscattering and x-ray investigations of violin varnish and wood
1980 · Per Arne Tove, Dag Sigurd, et al. · Nuclear Instruments and Methods · 12
Impurity incorporation during rf sputtering of silicon oxide layers
1972 · S. Petersson, G. Linker, et al. · physica status solidi (a) · 12
Silicon sensors with pyramidal structures for neutron imaging
2014 · A Kok, Z Kohout, et al. · Journal of Instrumentation · 10
Scintillator technology for enhanced resolution and contrast in X-ray imaging
2011 · Anna Sahlholm, Olof Svenonius, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 9
Works count: 59
Citation count: 1,311
H-index: 18
I10-index: 24
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