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Yu-Shyan Lin

Observed names: Lin,Y. S., Y S Lin, Y. S. Lin, Y.-S. Lin, Y.S. Lin, Y.‐S. Lin, Yu‐Shyan Lin
Observed institutions: National Chi Nan University, Tohoku University, National Dong Hwa University, Taiwan Semiconductor Manufacturing Company (Taiwan), United Microelectronics (Taiwan), National Cheng Kung University, Southern Taiwan University of Science and Technology
ORCID: 0000-0002-1428-2227
Observed ORCID: 0000-0002-1428-2227
OpenAlex ID: A5004810591
Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2Gate Dielectric Annealed in Nitrogen
2018 · Yu-Shyan Lin, Chi-Che Lu · IEEE Transactions on Electron Devices · 41
Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs
2009 · Yu-Shyan Lin, Jia-Jhen Jiang · IEEE Transactions on Electron Devices · 36
Characteristics of In $_0.425$ Al $_0.575$ As–InxGa $_1-x$ As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels
2005 · W.-C. Hsu, Y.-J. Chen, et al. · IEEE Transactions on Electron Devices · 34
Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT
2006 · W.-C. Hsu, D.-H. Huang, et al. · IEEE Transactions on Electron Devices · 26
High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT
2005 · Wei-Chou Hsu, Yeong-Jia Chen, et al. · IEEE Electron Device Letters · 25
High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT
2002 · Yen-Wei Chen, Wei-Chou Hsu, et al. · IEEE Transactions on Electron Devices · 25
An Improved In0.5Ga0.5P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
1997 · Yu-Shyan Lin, Yu-Huei Wu, et al. · Japanese Journal of Applied Physics · 25
Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature
2007 · Yu-Shyan Lin, Bo-Yuan Chen · Journal of The Electrochemical Society · 20
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Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor
2005 · Yu-Shyan Lin, Jr-Hung Huang · Journal of The Electrochemical Society · 19
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Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates
2006 · Yu-Shyan Lin, Bo-Yuan Chen · Journal of The Electrochemical Society · 17
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Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors
2009 · Yu-Shyan Lin, Shih-Kai Liang, et al. · Journal of The Electrochemical Society · 16
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High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
1999 · Y. S. Lin, W. C. Hsu, et al. · Applied Physics Letters · 16
Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors
2006 · Yu-Shyan Lin, Yu-Lung Hsieh · Journal of The Electrochemical Society · 15
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Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2and TiO2passivation
2014 · Yu-Shyan Lin, Shin-Fu Lin, et al. · Semiconductor Science and Technology · 14
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Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor
2007 · Yu-Shyan Lin, Bo-Yuan Chen, et al. · Journal of The Electrochemical Society · 14
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
2006 · Y S Lin, D H Huang, et al. · Semiconductor Science and Technology · 14
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Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors
2009 · Yu-Shyan Lin, Yu-Jeng Jou, et al. · Applied Physics Letters · 13
Low‐power 77–81 GHz CMOS LNA with excellent matching for automotive radars
2014 · Y.‐S. Lin, G.‐L. Lee, et al. · Electronics Letters · 12
Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices
2005 · Ching-Hwa Ho, Kuo-Wei Huang, et al. · Optics Express · 12
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
2004 · Yeong-Jia Chen, Wei-Chou Hsu, et al. · Solid-State Electronics · 12
Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels
2011 · Yu-Shyan Lin, Yeh-Chang Ma, et al. · Journal of The Electrochemical Society · 11
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Optical characterization of a GaAs/In_0.5(AlxGa_1-x)_0.5P/GaAs heterostructure cavity by piezoreflectance spectroscopy
2007 · Ching-Hwa Ho, Ji-Han Li, et al. · Optics Express · 11
Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K
2005 · Yu-Shyan Lin, Yu-Lung Hsieh · Journal of The Electrochemical Society · 11
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Effects of surface passivation and temperature on AlGaAs/InGaAs high-electron mobility transistor
2019 · Yu-Shyan Lin, Bo-Yuan Chen · Microelectronic Engineering · 10
Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor
2008 · Yu-Shyan Lin, Jia-Jhen Jiang · IEEE Electron Device Letters · 10
Works count: 75
Citation count: 626
H-index: 14
I10-index: 25
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