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Author

E. Jalaguier

Observed names: E Jalaguier, Eric JALAGUIER, Eric Jalaguier, Jalaguier, E., Jalaguier, Eric
Observed institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Côte d'Azur, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux, CEA Grenoble, Max Planck Institute of Microstructure Physics, Laboratoire des Matériaux et du Génie Physique, Direction de la Recherche Technologique, ASM International (Belgium), Centre d’Élaboration de Matériaux et d’Études Structurales, Institut de Microélectronique, Electromagnétisme et Photonique, Institut Néel, Laboratoire d'Électronique des Technologies de l'Information, ASM International (Finland), Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes
ORCID: 0009-0009-7001-4110
Observed ORCID: 0009-0009-7001-4110
OpenAlex ID: A5005059290
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
2014 · Marc Bocquet, Damien Deleruyelle, et al. · IEEE Transactions on Electron Devices · 138
The generic nature of the Smart-Cut® process for thin film transfer
2001 · B. Aspar, H. Moriceau, et al. · Journal of Electronic Materials · 124
InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser
2002 · C. Monat, C. Seassal, et al. · Applied Physics Letters · 121
Transfer of 3 in GaAs film on silicon substrateby proton implantation process
1998 · E. Jalaguier, B. Aspar, et al. · Electronics Letters · 92
InP 2D photonic crystal microlasers on siliconwafer:room temperature operation at 1.55 µm
2001 · C. Monat, C. Seassal, et al. · Electronics Letters · 83
Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
2003 · J. Mouette, C. Seassal, et al. · Electronics Letters · 74
28nm advanced CMOS resistive RAM solution as embedded non-volatile memory
2014 · A. Benoist, S. Blonkowski, et al. · IEEE International Reliability Physics Symposium proceedings · 60
On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
2016 · M. Saadi, P. Gonon, et al. · Journal of Applied Physics · 57
InP microdisk lasers on silicon wafer: CW roomtemperature operation at 1.6 µm
2001 · C. Seassal, P. Rojo-Romeo, et al. · Electronics Letters · 51
Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane
2002 · C. Monat, C. Seassal, et al. · Journal of Applied Physics · 49
Smart-Cut® process using metallic bonding:Application to transfer of Si, GaAs, InP thin films
1999 · B. Aspar, E. Jalaguier, et al. · Electronics Letters · 46
Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology
2013 · T. Diokh, E. Le-Roux, et al. · IEEE International Reliability Physics Symposium proceedings · 45
Endurance/Retention Trade Off in HfOx and TaOx Based RRAM
2016 · M. Azzaz, E. Vianello, et al. · IEEE International Memory Workshop (IMW) · 44
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
2020 · Stefan Petzold, Eszter Piros, et al. · Advanced Electronic Materials · 40
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Microscopic understanding of the low resistance state retention in HfO2 and HfAlO based RRAM
2014 · B. Traore, P. Blaise, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns
2010 · G Gay, T Baron, et al. · Nanotechnology · 36
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Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media
2008 · T. Pro, J. Buckley, et al. · IEEE Transactions on Nanotechnology · 35
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs
2013 · T. Cabout, L. Perniola, et al. · IEEE International Memory Workshop (IMW) · 29
III–V layer transfer onto silicon and applications
2005 · L. Di Cioccio, E. Jalaguier, et al. · physica status solidi (a) · 28
Modal analysis and engineering on inp-based two-dimensional photonic-crystal microlasers on a si wafer
2003 · C. Monat, C. Seassal, et al. · IEEE Journal of Quantum Electronics · 27
Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3
2016 · M. Azzaz, A. Benoist, et al. · Solid-State Electronics · 25
Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization
2015 · M. Azzaz, A. Benoist, et al. · European Solid-State Device Research Conference · 23
0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer
2002 · S. Bollaert, X. Wallaert, et al. · IEEE Electron Device Letters · 22
New layer transfers obtained by the SmartCut process
2003 · H. Moriceau, F. Fournel, et al. · Journal of Electronic Materials · 19
Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory
2008 · S. Jacob, B. De Salvo, et al. · Solid-State Electronics · 18
Works count: 119
Citation count: 1,635
H-index: 22
I10-index: 37
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