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S. Angen Franklin
Observed names:
S. Angen,
Samuel Angen Franklin
Institution:
Karunya University
Observed institution:
Karunya University
ORCID:
0009-0002-8834-4619
Observed ORCID:
0009-0002-8834-4619
OpenAlex ID:
A5005697121
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone
2024
·
I.V.Binola K Jebalin
, S. Angen Franklin
, et al.
·
Microelectronics Journal
·
17
Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications
2023
·
Binola K. Jebalin
, G. Gifta
, et al.
·
Microelectronics Journal
·
13
Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems
2023
·
S. Angen Franklin
, Binola K Jebalin I. V
, et al.
·
ECS Journal of Solid State Science and Technology
·
6
253 GHz fT Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications
2024
·
S. Angen Franklin
, Binola K. Jebalin I. V.
, et al.
·
physica status solidi (a)
·
5
A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications
2024
·
Angelin Delighta A
, Binola K Jebalin. I.V
, et al.
·
Silicon
·
4
Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage
2024
·
Ancy Michel
, Binola K. Jebalin I. V.
, et al.
·
physica status solidi (a)
·
3
Design and Simulation of a T-gated AlGaN/GaN HEMT with Added Mini Field Plate
2022
·
J.S. Raj Kumar
, D. Nirmal
, et al.
·
International Conference on Electronics and Sustainable Communication Systems (ICESC)
·
3
Demonstration of Fe‐Doped GaN Buffer HEMT to Achieve f MAX of 167 GHz
2025
·
S. Angen Franklin
, Binola K. Jebalin
, et al.
·
physica status solidi (a)
·
2
PDF
Optimization and High‐Frequency Performance Evaluation of AlGaN/GaN High‐Electron‐Mobility Transistors Aspect Ratio Scaling for Millimeter‐Wave Applications
2025
·
Samuel Angen Franklin
, Subhash Chander
, et al.
·
physica status solidi (a)
·
1
PDF
Enhanced RF performance on Graded-channel AlGaN/GaN HEMTs with Aerogel-Cavity for 6G Applications
2024
·
S. Angen Franklin
, Subhash Chander
, et al.
·
IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)
·
1
Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs
2024
·
S. Angen Franklin
, Binola K Jebalin I. V
, et al.
·
International Conference on Devices, Circuits and Systems (ICDCS)
·
1
4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars
2024
·
A. S. Augustine Fletcher
, S. Angen Franklin
, et al.
·
Journal of Electronic Materials
·
1
A wearable energy storage capacitor using graphene oxide and magnesuim oxide as electrodes
2019
·
S. Angen
, J. Grace Jency
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
1
Analytical Modelling and Simulation of Graphene Based Biosensor to Detect SARS-COV-2 from Aerosal Particles
2023
·
G. Gifta
, I. V.Binola K. Jebalin
, et al.
·
ECS Journal of Solid State Science and Technology
A Study on Transparent and Flexible Capacitor using Hybrid Zinc Oxide: Indium Tin Oxide and Silver as electrodes
2018
·
S. Angen Franklin
, J. Grace Jency
·
International Conference on Devices, Circuits and Systems (ICDCS)
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Works count:
15
Citation count:
58
H-index:
4
I10-index:
2
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