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Takahiro Shimoi
Observed name:
T. Shimoi
Institution:
Renesas Electronics (Japan)
Observed institution:
Renesas Electronics (Japan)
ORCID:
0009-0006-3314-4432
Observed ORCID:
0009-0006-3314-4432
OpenAlex ID:
A5005796904
15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs
2024
·
Tomoya Ogawa
, Ken Matsubara
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
29
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C
2022
·
Takahiro Shimoi
, Ken Matsubara
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
13
A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C
2023
·
Takahiro Shimoi
, Ken Matsubara
, et al.
·
IEEE Journal of Solid-State Circuits
·
12
High-Temperature Stable Physical Unclonable Functions with Error-Free Readout Scheme Based on 28nm SG-MONOS Flash Memory for Security Applications
2017
·
Tomoya Saito
, Hirokazu Nagase
, et al.
·
IEEE International Memory Workshop (IMW)
·
11
A 20Mb Embedded STT-MRAM Array Achieving 72% Write Energy Reduction with Self-termination Write Schemes in 16nm FinFET Logic Process
2021
·
T. Ito
, T. Saito
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
6
A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier
2021
·
Masaya Nakano
, Yoshinobu Kaneda
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
3
High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
2017
·
Takahiro Shimoi
, Tomoya Saito
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
·
1
Trends in Embedded Volatile and Non-Volatile Memories for Scalable Edge AI Applications
2025
·
Tomoya Saito
, Koichi Nose
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
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Works count:
8
Citation count:
75
H-index:
5
I10-index:
4
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