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B. Fortin

Realization of polycrystalline silicon magnetic sensors
2001 · F. Le Bihan, E. Carvou, et al. · Sensors and Actuators A Physical · 25
Standardization and stabilization of the resistivity-temperature characteristics of CdSe thin films by vacuum annealing
1989 · F. Raoult, B. Fortin, et al. · Thin Solid Films · 19
Acceptor and donor centers introduced by oxygen ionosorption at the a-Si:H film surface
1996 · M. Aoucher, T. Mohammed-Brahim, et al. · Journal of Applied Physics · 16
n-type polycrystalline silicon films obtained by crystallization of in situ phosphorus-doped amorphous silicon films deposited at low pressure
1994 · M. Sarret, A. Liba, et al. · Journal of Applied Physics · 14
Polycrystalline Semiconductors III: Physics and Technology
1994 · Horst P. Strunk, J.H. Werner, et al. · Trans Tech Publications Ltd. eBooks · 13
Regeneration of CdSe thin films after oxygen chemisorption
1984 · G. Rossé, F. Raoult, et al. · Thin Solid Films · 13
Model for the resistance variation of a thin semiconducting film during temperature- programmed desorption: Application to the O2-CdSe system
1985 · B. Fortin, H. Larzul, et al. · Thin Solid Films · 12
Resistance variation of a semiconduction thin film during a thermal desorption
1981 · Y. Colin, B. Fortin, et al. · physica status solidi (a) · 11
Stabilisation de couches minces de CdSe par traitement thermique sous vide
1979 · F Raoult, B Fortin, et al. · Thin Solid Films · 7
Single shot excimer laser crystallization of silicon films deposited by LPCVD
1997 · K. Kis-Sion, T. Mohammed-Brahim, et al. · Thin Solid Films · 6
Influence of thermal treatments on the sensitivity of CdSe thin films to oxygen ionosorption
1992 · F. Raoult, B. Fortin, et al. · Journal of Physics and Chemistry of Solids · 6
Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors
1996 · A.C. Salaün, B. Fortin, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
Polycrystalline Silicon as a Material for Magnetic Sensors: Application to Hall and TFT-Hall Cells
2001 · F. Le Bihan, E. Carvou, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 3
In-situ phosphorous-doped VLPCVD polysilicon layers for polysilicon thin-film transistors
1994 · M. Sarret, A. Liba, et al. · IEE Proceedings - Circuits Devices and Systems · 3
Electrical conductance variation of a-Si: H films during a temperature programmed desorption
1993 · M. Aoucher, T. Mohammed-Brahim, et al. · Journal of Physics and Chemistry of Solids · 3
Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements
1997 · F. Le Bihan, B. Fortin, et al. · Thin Solid Films · 2
Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature
1997 · H Hbib, O Bonnaud, et al. · Semiconductor Science and Technology · 2
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Capacitive equivalent circuit of the depletion layer of a MOS transistor used for determination of impurity concentration near insulator–semiconductor interface
1974 · A. Le Bloa, B. Fortin · physica status solidi (a) · 2
Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films
1996 · F. Le Bihan, B. Fortin, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1
Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films
1994 · D. Mostefa, B. Fortin, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1
Comparison of physical and electrical properties of ULPCVD and VLPCVD in situ phosphorus doped polysilicon or undoped polysilicon
1993 · M. SARRET, A. LIBA, et al. · Journal de Physique IV (Proceedings) · 1
Oxygen adsorption and electrical behaviour of thin, very-low-pressure chemical-vapour-deposited polysilicon films
1992 · B. Fortin, D. Mostefa, et al. · Sensors and Actuators A Physical · 1
Conditions for Obtaining In-situ Phosphorus Doped Lpcvd Polysilicon Layers With High Conductivity Onto Glass Substrates
1991 · M. SARRET, A. LIBA, et al. · Journal de Physique IV (Proceedings) · 1
Analysis of the Polycrystalline Semiconducting Film Electrical Resistance Variation Due to Isothermal Desorption and Temperature Stimulated Desorption of Oxygen
1989 · B. Fortin, F. Raoult, et al. · Springer proceedings in physics · 1
Autour du Professeur Jean Le Bot, physicien, transmetteur, ethnologue naval : De la connaissance technologique
2013 · Fortin, Bertrand, Miriel, Jacques, et al. · HAL
Works count: 37
Citation count: 167
H-index: 8
I10-index: 8
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