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Ko-Hsin Lee
Institutions:
Hsuan Chuang University,
Micron (Taiwan)
Observed institutions:
Hsuan Chuang University,
Synopsys (United States),
Micron (Taiwan)
ORCID:
0000-0003-0935-5804
Observed ORCID:
0000-0003-0935-5804
OpenAlex ID:
A5006074818
Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach
2017
·
Oleg Penzin
, Lee Smith
, et al.
·
IEEE Transactions on Electron Devices
·
29
Investigation of Random Telegraph Noise Under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash
2022
·
Xinlei Jia
, Lei Jin
, et al.
·
IEEE Electron Device Letters
·
22
Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model
2021
·
Ko-Hsin Lee
, Axel Erlebach
, et al.
·
IEEE Journal of the Electron Devices Society
·
9
PDF
A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM
2024
·
Wei-Chen Chen
, Hang-Ting Lue
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
8
Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development
2024
·
Xi-Wei Lin
, Salvatore Maria Amoroso
, et al.
·
IEEE International Memory Workshop (IMW)
·
8
Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies
2020
·
Salvatore M. Amoroso
, Plamen Asenov
, et al.
·
Journal of Microelectronic Manufacturing
·
4
Layer Thickness and Stress-Dependent Correction for InGaAs Low-Field Mobility in TCAD Applications
2015
·
Oleg Penzin
, Lee Smith
, et al.
·
IEEE Transactions on Electron Devices
·
4
Understanding the Floating-Body Effect Simulation and Optimization in 3D-DRAMs
2025
·
Salvatore Maria Amoroso
, Geert Eneman
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
2
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Works count:
8
Citation count:
86
H-index:
5
I10-index:
2
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