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Taiping Lü
Observed names:
Lu Tai-Ping,
Tai Ping Lu,
Tai-Ping Lu,
TaiPing Lu,
Taiping Lu
Institution:
Ludong University
Observed institutions:
Ludong University,
South China Normal University,
Lund University,
Chinese Academy of Sciences,
RISE Research Institutes of Sweden,
Institute of Physics,
NanoLund,
Taiyuan University of Technology
show all 8
ORCID:
0000-0002-2209-3012
Observed ORCID:
0000-0002-2209-3012
OpenAlex ID:
A5006126308
Temperature-dependent photoluminescence in light-emitting diodes
2014
·
Taiping Lu
, Ziguang Ma
, et al.
·
Scientific Reports
·
201
PDF
Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range
2015
·
Yang Jiang
, Yangfeng Li
, et al.
·
Scientific Reports
·
134
PDF
Investigation of temperature-dependent photoluminescence in multi-quantum wells
2015
·
Yutao Fang
, Lu Wang
, et al.
·
Scientific Reports
·
107
PDF
Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
2012
·
Taiping Lu
, Shuti Li
, et al.
·
Applied Physics Letters
·
83
InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes
2019
·
Zhaoxia Bi
, Filip Lenrick
, et al.
·
Nano Letters
·
58
Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
2014
·
Chunhua Du
, Ziguang Ma
, et al.
·
Applied Physics Letters
·
49
Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission
2020
·
Yanning Zheng
, Jingxia Zheng
, et al.
·
Nanomaterials
·
40
PDF
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
2020
·
Zhaoxia Bi
, Taiping Lu
, et al.
·
ACS Applied Materials & Interfaces
·
38
PDF
The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
2011
·
Tai-Ping Lu
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
30
The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality
2015
·
Lin Shang
, Taiping Lu
, et al.
·
RSC Advances
·
28
Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells
2016
·
Hailiang Dong
, Jing Sun
, et al.
·
Nanoscale
·
24
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
2012
·
Le-Juan Wu
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
22
PDF
Blue InGaN light-emitting diodes with dip-shaped quantum wells
2011
·
Tai-Ping Lu
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
22
PDF
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
2017
·
Yadan Zhu
, Taiping Lu
, et al.
·
Nanoscale Research Letters
·
21
Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode
2016
·
Hailiang Dong
, Jing Sun
, et al.
·
Physical Chemistry Chemical Physics
·
21
Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer
2012
·
Chao Liu
, Taiping Lu
, et al.
·
IEEE Photonics Technology Letters
·
20
Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2mixture gas
2017
·
Yadan Zhu
, Taiping Lu
, et al.
·
Applied Physics Express
·
19
Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier
2017
·
Xiaorun Zhou
, Taiping Lu
, et al.
·
Nanoscale Research Letters
·
18
PDF
Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes
2011
·
Taiping Lu
, Shuti Li
, et al.
·
Optics Express
·
17
Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications
2023
·
Anqi Guo
, Lichun Zhang
, et al.
·
Applied Physics Express
·
13
PDF
The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD
2013
·
Pei-Qiang Xu
, Yang Jiang
, et al.
·
Chinese Physics Letters
·
13
PDF
Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers
2012
·
Jin-Hui Tong
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
13
PDF
Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire
2014
·
Chunhua Du
, Ziguang Ma
, et al.
·
Applied Physics Letters
·
10
Pressure-induced distinct excitonic properties of 2D perovskites with isomeric organic molecules for spacer cations
2023
·
Qingya Wang
, Huafeng Ding
, et al.
·
Nanoscale
·
8
The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits
2021
·
Zhigang Jia
, Xiaodong Hao
, et al.
·
Materials Science in Semiconductor Processing
·
8
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Works count:
43
Citation count:
1,078
H-index:
18
I10-index:
23
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