Author

Georgiy G. Tarasov

Observed names: G G Tarasov, G. G. Tarasov, G. Tarasov, G.G Tarasov, G.G. Tarasov, GEORGIY TARASOV, Georgii Tarasov, Georgiy Tarasov

Institution: V.E. Lashkaryov Institute of Semiconductor Physics

Observed institutions: National Agency for New Technologies, Energy and Sustainable Economic Development, University of Rome Tor Vergata, National Academy of Sciences of Ukraine, Ferdinand-Braun-Institut, Humboldt-Universität zu Berlin, V.E. Lashkaryov Institute of Semiconductor Physics, Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Institute of Semiconductors, Istituto Nazionale per la Fisica della Materia, Institute of Automation and Electrometry, ENEA Frascati Research Centre, University of Arkansas at Fayetteville

ORCID: 0000-0001-8792-1555

Observed ORCID: 0000-0001-8792-1555

OpenAlex ID: A5006151946

Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

2000 · H. Kissel, U. Müller, et al. · Physical review. B, Condensed matter · 87

Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures

2005 · Yu. I. Mazur, Zh. M. Wang, et al. · Applied Physics Letters · 66

Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

2000 · G. G. Tarasov, Yu. I. Mazur, et al. · Journal of Applied Physics · 55

Transient luminescence of dense InAs/GaAs quantum dot arrays

2003 · J. W. Tomm, T. Elsaesser, et al. · Physical review. B, Condensed matter · 52

Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

2006 · G. G. Tarasov, Z. Ya. Zhuchenko, et al. · Semiconductors · 47

Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

2001 · Yu. I. Mazur, J. W. Tomm, et al. · Applied Physics Letters · 40

Development of continuum states in photoluminescence of self-assembled InGaAs∕GaAs quantum dots

2007 · Yu. I. Mazur, B. L. Liang, et al. · Journal of Applied Physics · 35

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

2012 · Yu. I. Mazur, V. G. Dorogan, et al. · Applied Physics Letters · 32

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures

2013 · Yu I Mazur, V G Dorogan, et al. · Journal of Physics D Applied Physics · 31

Two-photon excitation spectra of divalent europium in cubic perovskite KMgF3

1997 · R. Francini, U. M. Grassano, et al. · Physical review. B, Condensed matter · 30

Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures

2010 · Yu. I. Mazur, V. G. Dorogan, et al. · Journal of Applied Physics · 28

Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy

2010 · Yu. I. Mazur, V. G. Dorogan, et al. · Physical Review B · 27

Excitonic transfer in coupled InGaAs∕GaAs quantum well to InAs quantum dots

2006 · Yu. I. Mazur, B. L. Liang, et al. · Applied Physics Letters · 26

Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays

2009 · Yu. I. Mazur, V. G. Dorogan, et al. · Applied Physics Letters · 24

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

2011 · Yu I Mazur, V G Dorogan, et al. · Nanotechnology · 22

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Self-induced resonant optical rotation in crystals KCl:Li

1979 · M.Ya. Valakh, M.I. Dykman, et al. · Solid State Communications · 22

Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

2016 · S. L. Golovynskyi, O. I. Dacenko, et al. · Journal of Applied Physics · 21

Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures

2013 · D. Guzun, Yu. I. Mazur, et al. · Journal of Applied Physics · 19

Tailoring of high-temperature photoluminescence in InAs∕GaAs bilayer quantum dot structures

2005 · Yu. I. Mazur, Zh. M. Wang, et al. · Journal of Applied Physics · 19

Carrier transfer in vertically stacked quantum ring-quantum dot chains

2015 · Yu. I. Mazur, V. Lopes-Oliveira, et al. · Journal of Applied Physics · 18

Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples

2013 · Yu. I. Mazur, V. G. Dorogan, et al. · Journal of Applied Physics · 18

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

2013 · A Lin, B L Liang, et al. · Nanotechnology · 18

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Near-field optical spectroscopy of Ga As ∕ Al y Ga 1 − y As quantum dot pairs grown by high-temperature droplet epitaxy

2008 · Robert Pomraenke, Christoph Lienau, et al. · Physical Review B · 18

Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well

2006 · Yu. I. Mazur, B. L. Liang, et al. · Journal of Applied Physics · 18

Generation–recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

2003 · Vas. P. Kunets, U. Müller, et al. · Journal of Applied Physics · 17

Works count: 136

Citation count: 1,343

H-index: 19

I10-index: 53