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Andy Dai
Observed name:
A. Dai
Institution:
Indium Corporation (United States)
Observed institutions:
Dynex Semiconductor (United Kingdom),
China University of Geosciences,
Indium Corporation (United States),
CRRC (China)
ORCID:
0000-0002-3602-6072
Observed ORCID:
0000-0002-3602-6072
OpenAlex ID:
A5006223171
Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles
2014
·
Y. Wang
, S. Jones
, et al.
·
Microelectronics Reliability
·
63
Silver sintering die attach process for IGBT power module production
2017
·
Yimin Zhao
, Paul Mumby-Croft
, et al.
·
Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition
·
28
Seismic attenuation tomography in southwestern China: Insight into the evolution of crustal flow in the Tibetan Plateau
2020
·
Andy Dai
, Chi-Chia Tang
, et al.
·
Tectonophysics
·
25
High temperature polyimide polymer material for high voltage IGBT power module switching applications
2018
·
Muhammad Morshed
, Ariful Islam
, et al.
·
European Conference on Power Electronics and Applications
·
4
Novel Technique to Reduce Substrate Tilt & Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules
2016
·
James C. Booth
, Karthik Vijay
, et al.
·
2
Improved performance of new fast recovery high voltage diode chip set of 3.3kV and 6.5kV
2018
·
Ariful Islam
, L. Coulbeck
, et al.
·
European Conference on Power Electronics and Applications
·
1
Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer
2014
·
Chunlin Zhu
, Ian Deviny
, et al.
·
Annual Conference of the IEEE Industrial Electronics Society (IECON)
·
1
Novel Technique to Reduce Substrate Tilt & Improve Bondline Control Between AlN Substrate and AlSiC Baseplate in IGBT Modules
2021
·
Karthik Vijay
, James Booth
, et al.
·
Regional Events
Control of Partial Discharge with High Temperature Insulating Polymer for High Voltage IGBT Module Application
2018
·
Muhammad Morshed
, Ariful Islam
, et al.
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Works count:
9
Citation count:
124
H-index:
4
I10-index:
3
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