Author

C. Dalle

Observed names: C Dalle, C. DALLE, Christophe Dalle, Christophe Francois Dalle, DALLE, Christophe, Dalle, C. (C.), Dalle, C. (Christophe), Dalle, Christophe

Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Centrale Lille Institut

Observed institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Lille 1, Technical University of Munich, Centrale Lille Institut

ORCID: 0000-0001-9409-5204

Observed ORCID: 0000-0001-9409-5204

OpenAlex ID: A5006231307

Flat doping profile double-drift silicon IMPATT for reliable CW high-power high-efficiency generation in the 94-GHz window

1990 · C. Dalle, P.-A. Rolland, et al. · IEEE Transactions on Electron Devices · 80

Drift–diffusion versus energy model for millimetre‐wave impatt diodes modelling

1989 · C. Dalle, P. A. Rolland · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 44

Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes

1991 · P.A. Rolland, C. Dalle, et al. · IEEE Electron Device Letters · 18

Modeling of microwave top illuminated PIN photodetector under very high optical power

1996 · J. Harari, G.H. Jin, et al. · IEEE Transactions on Microwave Theory and Techniques · 15

Time‐domain numerical modelling of microwave non‐linear circuits

1992 · C. Dalle, P. A. Rolland, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 14

CW mm-wave GaAs TUNNETT diode

1990 · M. Pöbl, C. Dalle, et al. · Electronics Letters · 13

Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling

2012 · Christophe Dalle, François Dessenne, et al. · IEEE Transactions on Electron Devices · 9

Read versus flat doping profile structures for the realization of reliable high-power, high-efficiency 94 GHz IMPATT sources

1990 · C. Dalle, P.-A. Rolland · IEEE Transactions on Microwave Theory and Techniques · 9

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

2009 · X. Tang, M. Rousseau, et al. · Applied Physics Letters · 8

High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer

2006 · Ali El Moussati, C. Dalle · Journal of Computational Electronics · 8

2D time-domain electromagnetic macroscopic numerical modelling on parallel computer: application to the mm-wave silicon DIMPATT diode

2008 · Ali El Moussati, Christophe Dalle · Journal of Computational Electronics · 6

Influence of the operating temperature on the design and utilization of 94-GHz pulsed silicon IMPATT diodes

1998 · C. Dalle, S. Beaussart, et al. · IEEE Electron Device Letters · 6

Comparative studies of Si, GaAs, and InP millimeter-wave IMPATT diodes

1986 · D. Lippens, J. L. Nieruchalski, et al. · International Journal of Infrared and Millimeter Waves · 6

94-GHz pulsed silicon IMPATT oscillator modeling

1998 · S. Beaussart, O. Perrin, et al. · IEEE Transactions on Microwave Theory and Techniques · 5

Investigation of FECTED performance for millimeter-wave applications

2001 · F. Driouch, C. Dalle · IEEE Transactions on Microwave Theory and Techniques · 4

Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical, and carrier transport physical coupled models

1999 · S. Beaussart, O. Perrin, et al. · IEEE Transactions on Microwave Theory and Techniques · 4

Harmonic balance method applied to the numerical electrical physical modelling of two‐terminal, non‐linear microwave circuits in the frequency domain

1994 · C. Dalle · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 4

Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends

1990 · P. A. Rolland, M. R. Friscourt, et al. · European Microwave Conference (EuMC) · 4

Self-consistent electrothermal Monte Carlo modeling of nanowire MISFETs

2010 · Toufik Sadi, Jean-Luc Thobel, et al. · International Workshop on Computational Electronics · 3

Bipolar cathode transferred-electron device for millimeter-wave generation

2000 · C Dalle, M.R Friscourt · Solid-State Electronics · 3

Time-Domain Modeling of the Transient Response of a Back-To-Back Silicon Pin-Diode Passive Power-Limiter Circuit

1991 · C. Dalle, P.A. Rolland, et al. · European Microwave Conference (EuMC) · 3

Comparison between InP and other semiconductor, materials for the realization of millimeter wave two terminal devices

1990 · P.A. Rolland, M.R. Friscourt, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 3

2D time‐domain numerical Maxwell/transport modeling for THz distributed gallium nitride transferred electron device

2017 · Christophe Dalle · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 2

Differentiated Doping Profile for Vertical Terahertz GaN Transferred-Electron Devices

2015 · Christophe Francois Dalle · IEEE Transactions on Electron Devices · 2

FECTED oscillator optronic application feasibility

2000 · F Driouch, M.R Friscourt, et al. · Solid-State Electronics · 2

Works count: 102

Citation count: 289

H-index: 8

I10-index: 6