Author

Dan Yang

Institutions: Chinese Academy of Sciences, ShanghaiTech University, Shanghai Institute of Technical Physics, University of Chinese Academy of Sciences

Observed institutions: Chinese Academy of Sciences, ShanghaiTech University, Shanghai Institute of Technical Physics, University of Chinese Academy of Sciences

ORCID: 0000-0002-3498-1105

Observed ORCID: 0000-0002-3498-1105

OpenAlex ID: A5006254474

Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode

2021 · Liqi Zhu, Huijun Guo, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 27

Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes

2022 · Xuepeng Han, Huijun Guo, et al. · Infrared Physics & Technology · 18

Modeling and characteristics of MWIR HgCdTe APD at different post-annealing processes

2022 · Liao Yang, Huijun Guo, et al. · Infrared Physics & Technology · 15

Improved responsivity and detectivity of LPE HgCdTe short-wavelength infrared photodetector by tuning the composition gradient

2023 · Dan Yang, Jiamu Lin, et al. · Solid-State Electronics · 6

Area-dependent gain and noise characteristics of mid-wavelength infrared HgCdTe planar electron avalanche photodiodes

2022 · Dan Yang, Huijun Guo, et al. · Materials Research Express · 6

The latest developments of HgCdTe e-APDs at SITP

2020 · Huijun Guo, Lu Chen, et al. · 4

Developments and characterization of HgCdTe e-APDs at SITP

2023 · Huijun Guo, Liao Yang, et al. · 3

Characterization of gain and excess noise for mid-wavelength infrared HgCdTe electron avalanche photodiodes

2023 · Dan Yang, Huijun Guo, et al. · 2

Dark current mechanism of medium wave HgCdTe avalanche photodiode

2020 · Liao Yang, Lu Chen, et al. · 2

Works count: 9

Citation count: 83

H-index: 5

I10-index: 3