Author

B. BENBAHI

Institution: Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf

Observed institution: Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf

OpenAlex ID: A5006513303

The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon

2013 · M. N. MESLI, B. BENBAHI, et al. · Surface Review and Letters · 2

Works count: 1

Citation count: 2

H-index: 1

I10-index: