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Zhongqiu Xing

Observed names: Zhong-Qiu Xing, Zhong-qiu Xing
ORCID: 0000-0003-0527-5233
Observed ORCID: 0000-0003-0527-5233
OpenAlex ID: A5006865844
Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN waveguide
2020 · Sharif Muhammad Nawaz, Mussaab Ibrahim Niass, et al. · Superlattices and Microstructures · 32
Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer
2022 · Zhongqiu Xing, Fang Wang, et al. · Optics Express · 28
Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer*
2020 · Zhong-Qiu Xing, Yong-Jie Zhou, et al. · Chinese Physics Letters · 25
Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers
2024 · Aoxiang Zhang, Zhongqiu Xing, et al. · Optics Express · 14
Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs
2024 · Zhongqiu Xing, Yongjie Zhou, et al. · Scientific Reports · 12
Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage
2024 · Zhongqiu Xing, Yongjie Zhou, et al. · Optics Express · 11
Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells
2020 · Zhong-qiu Xing, Yong-jie Zhou, et al. · Optoelectronics Letters · 11
Improvement of the optoelectronic characteristics in deep-ultraviolet laser diodes with tapered p-cladding layer and triangular electron blocking layer
2022 · Zhongqiu Xing, Yao Wang, et al. · Applied Physics B · 8
Improving hole injection with the polarization effect for 279 nm AlGaN-based deep ultraviolet light-emitting diodes
2024 · Zhongqiu Xing, Aoxiang Zhang, et al. · Applied Physics B · 4
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Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
2022 · Aoxiang Zhang, Liya Jia, et al. · Journal of Russian Laser Research · 4
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Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
2022 · Muhammad Nawaz Sharif, Qamar Wali, et al. · Micro and Nanostructures · 4
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Increasing the hole energy by the p-type dual polarization for high internal quantum efficiency of 237 nm-band deep ultraviolet light-emitting diodes
2024 · Zhongqiu Xing, Aoxiang Zhang, et al. · Optical Engineering · 3
Optimization of thickness in electron blocking layer of AlGaN-based deep ultraviolet laser diodes
2019 · Zhongqiu Xing, Fang Wang, et al. · International Symposium on Next-Generation Electronics · 3
Optimization of AlGaN-based deep ultraviolet light-emitting diodes with superlattice-doped staggered-stepped electron-blocking layers
2025 · Aoxiang Zhang, Jiayi Yao, et al. · Optical Engineering · 2
Reduction of the threshold current of deep-ultraviolet laser diodes with embedded quantum dots in quantum wells
2025 · Zhongqiu Xing, Yongjie Zhou, et al. · New Journal of Physics · 2
Reduction of threshold current in deep-ultraviolet laser diodes with a lattice-matched waveguide layer
2026 · Zhongqiu Xing, Yongjie Zhou, et al. · Journal of Russian Laser Research
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Enhanced Optical Confinement Factor of DUV LD by Optimizing the p-Cladding Layer
2025 · Zhongqiu Xing, Yongjie Zhou, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Enhancement of the optoelectronic characteristics of deep ultraviolet LED by the n+-AlGaN tunnel junction
2024 · Zhongqiu Xing, Yongjie Zhou, et al. · International Conference on Electronics Technology (ICET)
Works count: 18
Citation count: 163
H-index: 8
I10-index: 7
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