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Vuong Van Cuong
Observed names:
Van Cuong,
Van Cuong, Vuong
Institutions:
Hiroshima University,
Research Institute for Semiconductor Engineering, Hiroshima University
Observed institutions:
Hiroshima University,
Hanoi National University of Education,
Research Institute for Semiconductor Engineering, Hiroshima University
ORCID:
0000-0002-4322-7526
Observed ORCID:
0000-0002-4322-7526
OpenAlex ID:
A5007607230
Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications
2022
·
Vuong Van Cuong
, Tatsuya Meguro
, et al.
·
IEEE Transactions on Electron Devices
·
31
High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications
2018
·
Vuong Van Cuong
, Seiji Ishikawa
, et al.
·
Thin Solid Films
·
17
Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications
2025
·
Vuong Van Cuong
, Tatsuya Meguro
, et al.
·
IEEE Journal of the Electron Devices Society
·
14
High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications
2020
·
Vuong Van Cuong
, Seiji Ishikawa
, et al.
·
Japanese Journal of Applied Physics
·
14
PDF
Impact of interface oxide type on the gamma radiation response of SiC TTL ICs
2024
·
Alex Metreveli
, Van Cuong
, et al.
·
Facta universitatis - series Electronics and Energetics
·
6
PDF
Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model
2023
·
Vuong Van Cuong
, Kaho Koyanagi
, et al.
·
Japanese Journal of Applied Physics
·
5
Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC
2019
·
Vuong Van Cuong
, Seiji Ishikawa
, et al.
·
Japanese Journal of Applied Physics
·
5
PDF
CF 4 :O 2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC
2020
·
Vuong Van Cuong
, Takamichi Miyazaki
, et al.
·
Japanese Journal of Applied Physics
·
4
PDF
High-temperature reliability of Ni/Ti/Nb ohmic contact on p-type 4H-SiC
2025
·
Vu Thi Ha
, Vuong Van Cuong
, et al.
·
Japanese Journal of Applied Physics
·
3
500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC
2021
·
Vuong Van Cuong
, Tadashi Sato
, et al.
·
Japanese Journal of Applied Physics
·
3
Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits
2024
·
Vuong Van Cuong
, Tatsuya Meguro
, et al.
·
Japanese Journal of Applied Physics
·
2
Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment
2023
·
Taisei Ozaki
, Vuong Van Cuong
, et al.
·
Institutional Repositories DataBase (IRDB)
SiC半導体による極限環境エレクトロニクス構築
2022
·
黒木, 伸一郎
, 志摩, 拓真
, et al.
·
Institutional Repositories DataBase (IRDB)
シリコンカーバイド極限環境用集積回路および画素デバイスの研究
2022
·
黒木, 伸一郎
, 志摩, 拓真
, et al.
·
Institutional Repositories DataBase (IRDB)
Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC
2019
·
Vuong Van Cuong
, Seiji Ishikawa
, et al.
·
Materials science forum
INFLUENCES OF Sn DOPING CONCENTRATION ON CHARACTERISTICS OF ZnO FILMS FOR SOLAR CELL APPLICATIONS
2015
·
Nguyen Dinh Lam
, Le Thuy Trang
, et al.
·
Journal of Science Natural Science
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Works count:
16
Citation count:
104
H-index:
5
I10-index:
4
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