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Vitor J. B. Torres

Observed names: J.B. Torres, Vitor, Torres Vitor, Torres, V. J. B., Torres, Vitor, V J B Torres, V. J. B. Torres, V. T. B. Torres, V. Torres, V.J. B. Torres, V.J.B. Torres, VITOR TORRES, Vitor J.B. Torres, Vitor José Babau Torres, Vitor Torres, Vítor J B. Torres, Vítor J.B. Torres
Observed institutions: Australian Nuclear Science and Technology Organisation, Aarhus University, University of Exeter, Research Complex at Harwell, National Institutes for Quantum Science and Technology, Ruđer Bošković Institute, Université de ain Témouchent, Takasaki Advanced Radiation Research Institute, Centre for Accelerator Science, University of Aveiro, University of Reading, Institute of Physics, Newcastle University, University of Minho
ORCID: 0000-0003-3795-6818
Observed ORCID: 0000-0003-3795-6818
OpenAlex ID: A5008379979
Electrical activity of chalcogen-hydrogen defects in silicon
2003 · J. Coutinho, V. J. B. Torres, et al. · Physical review. B, Condensed matter · 83
Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme andab initiocalculations
2012 · O. Pagès, J. Souhabi, et al. · Physical Review B · 65
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments andab initiomodeling
2009 · V. P. Markevich, A. R. Peaker, et al. · Physical Review B · 64
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Donor-vacancy complexes in Ge: Cluster and supercell calculations
2006 · J. Coutinho, S. Öberg, et al. · Physical Review B · 64
Silicon carbide diodes for neutron detection
2020 · José Coutinho, Vitor J.B. Torres, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 57
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Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon
1997 · P. Leary, R. Jones, et al. · Physical review. B, Condensed matter · 56
Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge
2005 · J Coutinho, R Jones, et al. · Journal of Physics Condensed Matter · 54
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
2018 · Ivana Capan, Tomislav Brodar, et al. · Journal of Applied Physics · 53
Theory of the carbon vacancy in 4H -SiC: Crystal field and pseudo-Jahn-Teller effects
2017 · José Coutinho, Vitor J. B. Torres, et al. · Physical review. B./Physical review. B · 46
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Formation energy and migration barrier of a Ge vacancy from ab initio studies
2006 · H.M. Pinto, J. Coutinho, et al. · Materials Science in Semiconductor Processing · 46
Structure and properties of vacancy-oxygen complexes in Si1−xGex alloys
2004 · V. P. Markevich, A. R. Peaker, et al. · Physical Review B · 43
Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon
2010 · V. P. Markevich, A. R. Peaker, et al. · physica status solidi (a) · 35
Formation of interstitial carbon–interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory
2008 · L. I. Khirunenko, M. G. Sosnin, et al. · Physical Review B · 27
Interatomic potentials in semiconductors and their validity for defect calculations
1988 · A. M. Stoneham, V. T. B. Torres, et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 26
Calculation of deep carrier traps in a divacancy in germanium crystals
2006 · J. Coutinho, V. J. B. Torres, et al. · Applied Physics Letters · 24
Ab initiostudy of CsI and its surface
2006 · R. M. Ribeiro, J. Coutinho, et al. · Physical Review B · 22
Theory of shallow and deep boron defects in 4H -SiC
2022 · Vitor J. B. Torres, Ivana Capan, et al. · Physical review. B./Physical review. B · 21
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Early stage donor-vacancy clusters in germanium
2006 · José Coutinho, Vitor J. B. Torres, et al. · Journal of Materials Science Materials in Electronics · 20
Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
2004 · A. Balsas, J. Coutinho, et al. · Physical Review B · 19
Nitrogen-Hydrogen Defects in GaP
1998 · P. Dixon, D. Richardson, et al. · physica status solidi (b) · 16
Ab initiocalculations of the structure and dynamics of C60and C3−60
1992 · R. Jones, C. D. Latham, et al. · Philosophical Magazine Letters · 16
Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters
2006 · V.J.B. Torres, J. Coutinho, et al. · Physica B Condensed Matter · 15
Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
1997 · V. J. B. Torres, S. Öberg, et al. · MRS Internet Journal of Nitride Semiconductor Research · 15
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Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys
2005 · A Balsas, V J B Torres, et al. · Journal of Physics Condensed Matter · 14
Electronic structure of divacancy–hydrogen complexes in silicon
2003 · J Coutinho, V J B Torres, et al. · Journal of Physics Condensed Matter · 14
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Works count: 116
Citation count: 1,229
H-index: 19
I10-index: 34
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