Author

Elena V. Molodtsova

Observed names: E. V. Molodtsova, E.V. Molodtsova, Молодцова Е.В.

Institution: Giredmet (Russia)

Observed institution: Giredmet (Russia)

ORCID: 0000-0002-2699-9524

Observed ORCID: 0000-0002-2699-9524

OpenAlex ID: A5008741537

Methods of dislocation structure characterization in A IIIB V semiconductor single crystals

2022 · Stanislav N. Knyazev, Aleksandr V. Kudrya, et al. · Modern Electronic Materials · 10

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Study of indium antimonide single crystals obtained by the modernized Chokhralsky method in several crystallographic directions

2023 · N. Yu. Komarovsky, E. V. Molodtsova, et al. · Industrial laboratory Diagnostics of materials · 9

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The effect of hydrogen on bulk and surface traps in indium antimonide

1990 · A.Y. Polyakov, A.V. Pakhomov, et al. · Solid State Communications · 7

Methods of dislocation structure characterization in AIIIBV semiconductor single crystals

2023 · S. N. Knyazev, A. V. Kudrya, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 6

Investigation on the Properties of Large [100]−oriented Insb Single Crystals Grown by Czohralski Method

2015 · V. S. Ezhlov, A. G. Milvidskaya, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 6

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Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method

2021 · R. Yu. Kozlov, S. S. Kormilitsina, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 5

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Correct determination of electron concentration in n-GaSb by electrical measurements

2022 · Yuri N. Parkhomenko, Aleksandr G. Belov, et al. · Modern Electronic Materials · 3

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Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

2021 · Roman Yu. Kozlov, Svetlana S. Kormilitsina, et al. · Modern Electronic Materials · 3

Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates

2021 · S. S. Kormilitsina, E. V. Molodtsova, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 2

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Structural Studies of Large [100]−oriented Czochralski Grown Gasb Single Crystals

2015 · V. S. Ezhlov, A. G. Milvidskaya, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 2

Determination of the Criterion for Morphological Classification of Etching Pits Formed in InSb Single Crystals Grown by the Czochralski Method in the [111] Crystallographic Direction and Doped with Tellurium

2024 · N. Yu. Komarovsky, E. O. Zhuravlev, et al. · Inorganic Materials Applied Research · 1

Determination of Conductivity Electron Concentration in Single-Crystalline n-GaSb Samples Using FIR Reflection Spectra at T = 295 K

2024 · A. G. Belov, E. V. Molodtsova, et al. · Optics and Spectroscopy · 1

Investigation of the Strength Properties of Single-Crystal InSb Depending on Crystallographic Orientation and Growth Conditions

2023 · N. Yu. Komarovskii, E. V. Molodtsova, et al. · Journal of Communications Technology and Electronics · 1

Structure investigation of large single crystals of gallium antimonide grown by the Czochralski method in the [100] direction

2015 · V. S. Ezhlov, A. G. Mil’vidskaya, et al. · Russian Microelectronics · 1

Определение значений электрофизических параметров антимонида индия по полевой зависимости коэффициента Холла

2026 · Белов А.Г., Козлов Р.Ю., et al. · CyberLeninK (CyberLeninka)

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Параметры исследованных образцов

2026 · Белов А.Г., Козлов Р.Ю., et al. · Cifra LLC Journals

Зависимости коэффициента Холла от индукции магнитного поля

2026 · Белов А.Г., Козлов Р.Ю., et al. · Cifra LLC Journals

Processing of InSb Substrates to Achieve Surface Morphology Suitable for Molecular Beam Epitaxy

2025 · A. A. Trofimov, R. Yu. Kozlov, et al. · Journal of Communications Technology and Electronics

Physical and Technological Causes of Channel Inhomogeneity in InSb Single Crystals Heavily Doped with Te

2024 · N. Yu. Komarovskiy, Yu. N. Parkhomenko, et al. · Russian Microelectronics

Determination of the criterion for the morphological classification of etching pits formed in InSb single crystals grown by the Czochralski method in the crystallographic direction [111] and doped with tellurium

2024 · N. Yu. Komarovsky, E. O. Zhuravlev, et al. · Industrial laboratory Diagnostics of materials

Physical and technological causes of channel inhomogeneity in InSb single crystals heavily doped with Te

2024 · N. Yu. Komarovskiy, Yu. N. Parkhomenko, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Correct determination of electron concentration in n–GaSb from Hall data

2023 · Yu. N. Parkhomenko, A. G. Belov, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers

2020 · Svetlana S. Kormilitsina, Elena V. Molodtsova, et al. · Modern Electronic Materials

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The defects in Se‐doped InSb single crystals

1979 · E. N. Prihodjko, T. J. Olhovikova, et al. · Kristall und Technik

Works count: 24

Citation count: 57

H-index: 5

I10-index: 1