2011 · Ozlem Celik, Engin Tiras, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 12

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Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

2020 · O Donmez, M Aydın, et al. · Semiconductor Science and Technology · 11

Contactless electron effective mass determination in GaInNAs/GaAs quantum wells

2012 · E. Tiras, S. Ardali · The European Physical Journal B · 10

Temperature controlled phase transition and characterization of Cu2O and CuO thin films grown at different growth temperatures via mist CVD

2026 · Polat Narin, Ece Kutlu-Narin, et al. · Applied Physics A · 9

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The effect of barrier layers on 2D electron effective mass in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures

2021 · F Sonmez, S Ardali, et al. · Journal of Physics Condensed Matter · 9

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Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering

2012 · Engin Tiras, Sukru Ardali · physica status solidi (b) · 8

Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra

2012 · E. Tiras, M. Tanisli, et al. · physica status solidi (b) · 8

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer

2016 · G. Atmaca, S. Ardali, et al. · Solid-State Electronics · 7

The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

2020 · F. Sonmez, S. Ardali, et al. · Materials Science in Semiconductor Processing · 6

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

2016 · Engin Arslan, Şükrü Ardalı, et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics · 6

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Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells

2012 · Sukru Ardali, Engin Tiras · Physica E Low-dimensional Systems and Nanostructures · 6

Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures

2012 · E. Tiras, S. Ardali, et al. · Journal of Electronic Materials · 6

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Longitudinal polar optical phonons in InN/GaN single and double het‐ erostructures

2011 · Sukru Ardali, Engin Tiras, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6

The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

2023 · S. Ardali, F. Sonmez, et al. · Materials Science and Engineering B · 5

Integer quantum Hall effect measurement analysis in Ga0.68In0.32N0.017As/GaAs quantum wells with various annealing time

2021 · Sukru Ardali, Engin Tiras, et al. · Physica B Condensed Matter · 5

SiC Substrate effects on electron transport in the epitaxial graphene layer

2014 · Engin Arslan, Semih Çakmakyapan, et al. · Electronic Materials Letters · 5

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The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number

2022 · F. Sonmez, S. Ardali, et al. · Physica B Condensed Matter · 4

Works count: 37

Citation count: 327

H-index: 10

I10-index: 11