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Andrea Vici

Observed names: A. Vici, Andrea - Vici, Vici, Andrea
Institution: IMEC
ORCID: 0000-0002-3614-9590
Observed ORCID: 0000-0002-3614-9590
OpenAlex ID: A5009544942
Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition
2023 · Andrea Vici, Robin Degraeve, et al. · IEEE Transactions on Electron Devices · 12
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
2024 · Luca Panarella, Ben Kaczer, et al. · npj 2D Materials and Applications · 11
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SILC and TDDB reliability of novel low thermal budget RMG gate stacks
2024 · Andrea Vici, Robin Degraeve, et al. · IEEE International Reliability Physics Symposium proceedings · 10
Low Thermal Budget Multi-Vth RMG Solution with Excellent TDDB and BTI Reliability by Combining Hydrogen Radical IL Treatment, n-Dipole-First Shifter and Low-Temperature HK PDA
2024 · J. Franco, H. Arimura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials
2021 · Yeonsu Kim, Ben Kaczer, et al. · Advanced Electronic Materials · 8
On Border Traps in Back-Side-Illuminated CMOS Image Sensor Oxides
2020 · Andrea Vici, Felice Russo, et al. · IEEE Transactions on Electron Devices · 8
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Gate oxide reliability: upcoming trends, challenges, and opportunities
2024 · B. Kaczer, R. Degraeve, et al. · IEEE Silicon Nanoelectronics Workshop · 6
Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks
2022 · Andrea Vici, Robin Degraeve, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current
2024 · Anirudh Varanasi, Robin Degraeve, et al. · IEEE International Reliability Physics Symposium proceedings · 5
A multi-energy level agnostic approach for defect generation during TDDB stress
2022 · Andrea Vici, Robin Degraeve, et al. · Solid-State Electronics · 5
Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance
2018 · A. Vici, F. Russo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
Markov model describing progressive degradation of local percolation path in thin oxides
2025 · Sara Sacchi, Anirudh Varanasi, et al. · Solid-State Electronics · 4
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations
2023 · A. Vici, R. Degraeve, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology
2023 · P. Saraza-Canflanca, J. Diaz-Fortuny, et al. · IEEE International Reliability Physics Symposium proceedings · 4
A multi-energy level agnostic simulation approach to defect generation
2021 · Andrea Vici, Robin Degraeve, et al. · Solid-State Electronics · 4
Performance and Reliability Degradation of CMOS Image Sensors in Back-Side Illuminated Configuration
2020 · Andrea Vici, Felice Russo, et al. · IEEE Journal of the Electron Devices Society · 4
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TDDB Reliability Improvement of Low Thermal Budget RMG Stacks
2025 · G. Molinaro, H. Arimura, et al. · IEEE International Reliability Physics Symposium proceedings · 3
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Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress
2022 · Kookjin Lee, Ben Kaczer, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Generation of oxide traps in Back-Side-Illuminated CMOS Image Sensors and impact on reliability
2019 · Andrea Vici, Felice Russo, et al. · European Solid-State Device Research Conference · 2
Time-scale-based lifetime extrapolation from close-to-operating-voltage gate leakage current
2026 · Anirudh Varanasi, Robin Degraeve, et al. · Solid-State Electronics
One to two-trap percolation transition of SILC in SiO2/HfO2
2021 · Andrea - Vici, Robin Degraeve, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 26
Citation count: 112
H-index: 6
I10-index: 3
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