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Iu.A. Iusipova
Observed names:
Iu. A. Iusipova,
Iulia Iusipova,
Iuliia A Iusipova,
Iuliia A. Iusipova,
Iuliia Iusipova
Observed institutions:
Russian Academy of Sciences,
National Research University of Electronic Technology,
Institute for Design Problems in Microelectronics
ORCID:
0000-0002-8289-0195
Observed ORCID:
0000-0002-8289-0195
OpenAlex ID:
A5009634103
Bifurcations in the Dynamical System for Three-Layered Magnetic Valve
2015
·
Natalia Ostrovskaya
, Vladimir Skidanov
, et al.
·
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
·
16
Qualitative Theory of Dynamical Systems for Control of Magnetic Memory Elements
2019
·
N. V. Ostrovskaya
, Iu. A. Iusipova
·
The Physics of Metals and Metallography
·
14
Spin Valves in Microelectronics (A Review)
2021
·
Iu. A. Iusipova
, A. I. Popov
·
Semiconductors
·
9
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy
2018
·
Iu. A. Iusipova
·
Semiconductors
·
9
Dynamics of the Vector of Magnetization in a Free Layer of a Spin Valve with Planar Anisotropy under the Action of Arbitrarily Directed Magnetic Fields
2023
·
Iu. A. Iusipova
, V. A. Skidanov
·
Bulletin of the Russian Academy of Sciences Physics
·
4
Precession Frequency and Switching Time of the Magnetization Vector in the Spin-Valve Active Layer With Perpendicular Anisotropy
2021
·
Iuliia Iusipova
·
IEEE Magnetics Letters
·
4
Frequency and Speed of Action of a Spin Valve with Planar Layer Anisotropy
2020
·
Iu. A. Iusipova
·
Physics of the Solid State
·
4
Precession of Magnetization of a Spin-Valve Free Layer and Its Switching under the Effect of a Magnetic Field Perpendicular to the Anisotropy Axis
2019
·
Iu. A. Iusipova
·
Semiconductors
·
3
Precession of Spin-Valve Free Layer Magnetization and Its Switching Under Influence of a Magnetic Field Perpendicular to Axis of Anisotropy
2019
·
Iuliia A. Iusipova
·
Proceedings of Universities ELECTRONICS
·
3
Bifurcation Analysis of the Dynamical System for a Threelayered Valve With Perpendicular Anisotropy
2018
·
Natalia Ostrovskaya
, Vladimir Skidanov
, et al.
·
EPJ Web of Conferences
·
2
PDF
Dynamics of Magnetization in the Free Layer of a Spin Valve Under the Influence of Magnetic Field, Perpendicular and Parallel to the Layer Plane
2018
·
IPPM RAS
, N.V. Ostrovskaya
, et al.
·
Problems of advanced micro- and nanoelectronic systems development
·
2
PDF
Simulation of Magnetization Dynamics in Three-layered Ferromagnetic Structures with Pinned Boundaries
2018
·
IPPM RAS
, N.V. Ostrovskaya
, et al.
·
Problems of advanced micro- and nanoelectronic systems development
·
2
PDF
Analysis of Switching Characteristics of MRAM Cells Based on Materials with Uni-axial Anisotropy
2017
·
Iu.A. Iusipova
·
Proceedings of Universities ELECTRONICS
·
2
PDF
Mathematical Model of the SOT-MRAM Cell based on the Spin Hall Effect
2021
·
IPPM RAS
, N.V. Ostrovskaya
, et al.
·
Problems of advanced micro- and nanoelectronic systems development
·
1
PDF
Critical Switching Characteristics of a Spin-Valve Structure in an Arbitrarily Directed Magnetic Field
2025
·
Iu. A. Iusipova
·
Bulletin of the Russian Academy of Sciences Physics
Dynamics of the magnetization vector of the spin-valve free layer with planar anisotropy under the action of magnetic fields of the arbitrary direction
2023
·
V. A. Skidanov
, Iu. A. Iusipova
·
Известия Российской академии наук Серия физическая
Mathematical model of a cylindrical SOT-MRAM cell
2022
·
IPPM RAS
, Iu.A. Iusipova
, et al.
·
Problems of advanced micro- and nanoelectronic systems development
PDF
Spin Valves in Microelectronics. Review
2021
·
Iu.A. Iusipova
, A.I. Popov
·
Proceedings of Universities ELECTRONICS
Precession frequency and switching time of the magnetization vector of the spin-valve free layer with longitudinal anisotropy
2019
·
Iuliia A Iusipova
·
Journal of Physics Conference Series
PDF
Critical switching characteristics of three-layered spin valve for different materials and alloys with uniaxial anisotropy
2018
·
Iuliia Iusipova
·
EPJ Web of Conferences
PDF
Hierarchy of Models of Operation of Magnetic Random-Access Memory Cell With in-plane Anisotropy of Cobalt Layers
2017
·
Iu.A. Iusipova
·
Proceedings of Universities ELECTRONICS
PDF
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Works count:
23
Citation count:
75
H-index:
4
I10-index:
2
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