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V. N. Merai

Observed names: Merai, V., V Merai, V. Merai, V. N Merai, V.N. Merai, Vinod Merai
OpenAlex ID: A5009721095
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003 · S. M. Ting, J. C. Ramer, et al. · Journal of Applied Physics · 101
Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
2003 · D. I. Florescu, S. M. Ting, et al. · Applied Physics Letters · 90
Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
1998 · C.A Tran, R.F Karlicek, et al. · Journal of Crystal Growth · 66
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors
2003 · L. Kadinski, V. Merai, et al. · Journal of Crystal Growth · 59
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors
2006 · B. Mitrovic, A. Parekh, et al. · Journal of Crystal Growth · 51
Sapphire substrate misorientation effects on GaN nucleation layer properties
2004 · D. Lu, D.I. Florescu, et al. · Journal of Crystal Growth · 33
Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development
2003 · D. Lu, D. I. Florescu, et al. · physica status solidi (a) · 24
Analysis of SAW properties in ZnO/Al/sub x/Ga/sub 1-x/N/c-Al/sub 2/O/sub 3/ structures
2005 · Ying Chen, N.W. Emanetoglu, et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 13
AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire
2004 · D.I. Florescu, J.C. Ramer, et al. · Journal of Crystal Growth · 9
Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD
2005 · D. Lu, D. I. Florescu, et al. · physica status solidi (a) · 4
High power blue LED development using different growth modes
2004 · Dong S. Lee, Doru I. Florescu, et al. · physica status solidi (a) · 4
Modeling analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors
2015 · Kadinski, L., Merai, V., et al. · Università del Salento · 3
InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets
2006 · D. I. Florescu, S. M. Ting, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3
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Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study
2005 · F. Shahedipour-Sandvik, M. Jamil, et al. · MRS Internet Journal of Nitride Semiconductor Research · 3
Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire
2002 · D.I. Florescu, E.P. Passman, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2
InGaN/GaN LEDs optical output efficiency enhancement based on AFM surface morphology studies of the constituent layers
2005 · D.I. Florescu, J.C. Ramer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 1
Observation of ring defects in high Indium content InGaN/GaN MQW
2004 · F. Shahedipour‐Sandvik, Muhammad Jamil, et al. · APS
Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morphology
2004 · D.I. Florescu, D.S. Lee, et al. · MRS Proceedings
Surface Acoustic Waves in ZnO/AlxGa1-xN/C-Al2O3 Structures
2003 · Ying Chen, N.W. Emanetoglu, et al.
Works count: 19
Citation count: 466
H-index: 9
I10-index: 8
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