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Susheel Nawal

Observed names: Nawal, Susheel, S. Nawal
OpenAlex ID: A5009821987
Compact Analytical Threshold-Voltage Model of Nanoscale Fully Depleted Strained-Si on Silicon Germanium-on-Insu lator (SGOI) MOSFETs
2007 · Vivek Venkataraman, Susheel Nawal, et al. · IEEE Transactions on Electron Devices · 65
A simple analytical threshold voltage model of nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs
2006 · M.J. Kumar, V. Venkataraman, et al. · IEEE Transactions on Electron Devices · 55
Impact of Strain or Ge Content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs
2007 · M. Jagadesh Kumar, Vivek Venkataraman, et al. · IEEE Transactions on Device and Materials Reliability · 50
Comprehensive approach to modeling threshold voltage of nanoscale strained silicon SOI MOSFETs
2007 · M. Jagadesh Kumar, Vivek Venkataraman, et al. · Journal of Computational Electronics · 16
Analytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Analog Circuit Simulation
2007 · M. Kumar, Vivek Venkataraman, et al. · 8
A High Current Gain Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs
2006 · M.J. Kumar, S. Nawal, et al. · 2
Analytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Analog Circuit Simulation
2010 · Venkataraman, Vivek, Nawal, Susheel, et al. · arXiv (Cornell University) · 1
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Compact Modeling of Threshold Voltage in Nanoscale Strained-Si/SiGe MOSFETs
2006 · Susheel Nawal, Vivek Venkataraman, et al.
Works count: 8
Citation count: 197
H-index: 5
I10-index: 4
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