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D. Zander

Model-based engineering for designing cyber-physical systems from product specifications
2022 · Alexandre Parant, François Gellot, et al. · Computers in Industry · 27
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Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor
2008 · C. Petit, D. Zander, et al. · Organic Electronics · 25
Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides
2002 · A. Meinertzhagen, C. Petit, et al. · Journal of Applied Physics · 25
Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs
2004 · J. Boch, F. Saigne, et al. · IEEE Transactions on Nuclear Science · 24
Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages
2005 · Damien Zander, Norbert Hoffmann, et al. · Microelectronic Engineering · 17
Low voltage SILC and P- and N-MOSFET gate oxide reliability
2004 · C. Petit, A. Meinertzhagen, et al. · Microelectronics Reliability · 16
Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown
2009 · Mathias Marinoni, Antoine D. Touboul, et al. · IEEE Transactions on Nuclear Science · 14
High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects
2008 · Mathias Marinoni, Antoine D. Touboul, et al. · IEEE Transactions on Nuclear Science · 12
Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2–2.3nm) oxides
2006 · C. Petit, D. Zander · Microelectronics Reliability · 12
IEC 61499 Control Architectures Evaluation for Automation Software Development
2023 · A. Parant, D. Zander, et al. · IFAC-PapersOnLine · 8
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Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.
2001 · D. Zander, F. Saigné, et al. · Microelectronics Reliability · 6
Low frequency dielectric loss of metal/insulator/organic semiconductor junctions in ambient conditions
2012 · R. Ledru, S. Pleutin, et al. · Organic Electronics · 5
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Low voltage and temperature effects on SILC in stressed ultrathin oxide films
2001 · A Meinertzhagen, D Zander, et al. · Solid-State Electronics · 5
High field stress at and above room temperature in 2.3 nm thick oxides
2001 · D. Zander, C. Petit, et al. · Microelectronics Reliability · 5
Electrical stress effects on ultrathin (2.3 nm) oxides
2001 · D. Zander, F. Saigne, et al. · Journal of Non-Crystalline Solids · 5
Stress induced gate–drain leakage current in ultra-thin gate oxide
2006 · C. Petit, D. Zander · Microelectronics Reliability · 3
Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2–2.5 nm) after constant voltage stresses
2007 · C Petit, D Zander · Semiconductor Science and Technology · 2
Effect of boron neutralization on interface state creation after direct tunneling injections at 100 °C in 2,3-nm ultrathin gate oxides
2003 · D. Zander, J. Boch, et al. · Applied Physics Letters · 2
On stress induced leakage current in 5 and 3 nm thick oxides
2000 · A Meinertzhagen, D Zander, et al. · Microelectronics Reliability · 2
Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide
2008 · Marinoni, M., Touboul, Antoine, et al. · HAL · 1
Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides
2004 · D. Zander · Microelectronics Reliability · 1
Comparison of ultra-thin gate oxide degradation in P and N-MOSFETs
2004 · C. Petit, A. Meinertzhagen, et al. · IEEE International Conference on Microelectronics (MIEL) · 1
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices
2003 · D ZANDER · Microelectronics Reliability · 1
Contribution à l'étude de la dégradation des couches d'oxyde de silicium ultra-minces, sous contraintes électriques
2002 · D. Zander · 1
Système Cyber-Physique de Production Modulaire
2022 · Parant, Alexandre, Gellot, François, et al. · HAL
Works count: 44
Citation count: 220
H-index: 9
I10-index: 9
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