Author

Tomislav Brodar

Observed names: Brodar T., Brodar, Tomislav, T. Brodar

Observed institutions: Australian Nuclear Science and Technology Organisation, National Institutes for Quantum Science and Technology, Ruđer Bošković Institute, Université de ain Témouchent, Takasaki Advanced Radiation Research Institute, Centre for Accelerator Science, University of Aveiro

ORCID: 0000-0002-6459-0260

Observed ORCID: 0000-0002-6459-0260

OpenAlex ID: A5010051660

Response of 4H-SiC Detectors to Ionizing Particles

2020 · Robert Bernat, Ivana Capan, et al. · Crystals · 216

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Silicon carbide diodes for neutron detection

2020 · José Coutinho, Vitor J.B. Torres, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 57

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Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

2018 · Ivana Capan, Tomislav Brodar, et al. · Journal of Applied Physics · 53

One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water

2020 · Marin Kovačić, Klara Perović, et al. · Materials · 37

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Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime

2017 · Željko Pastuović, Rainer Siegele, et al. · Journal of Physics Condensed Matter · 35

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Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

2020 · Ivana Capan, Tomislav Brodar, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 33

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

2018 · Tomislav Brodar, Ivana Capan, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 27

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

2020 · Tomislav Brodar, Luka Bakrač, et al. · Crystals · 22

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M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

2021 · I. Capan, T. Brodar, et al. · Journal of Applied Physics · 19

M center in 4 H -SiC is a carbon self-interstitial

2021 · J. Coutinho, J. D. Gouveia, et al. · Physical review. B./Physical review. B · 18

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Distinguishing the EH 1 and S 1 defects in n-type 4H-SiC by Laplace DLTS

2022 · Tihomir Knežević, Tomislav Brodar, et al. · Applied Physics Express · 13

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Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques