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Hideaki Murotani

Observed names: Murotani, Hideaki, 室谷, 英彰, 室谷英彰
ORCID: 0000-0001-9820-9926
Observed ORCID: 0000-0001-9820-9926
OpenAlex ID: A5010557160
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
2012 · Hideaki Murotani, Daiki Akase, et al. · Applied Physics Letters · 54
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 · Hideaki Murotani, Yoichi Yamada, et al. · Journal of Applied Physics · 51
High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells
2020 · Hideaki Murotani, Ryohei Tanabe, et al. · Applied Physics Letters · 50
Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells
2020 · Hideaki Murotani, Hiroyuki Miyoshi, et al. · Journal of Applied Physics · 47
Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers
2008 · Hideaki Murotani, Yoichi Yamada, et al. · Journal of Applied Physics · 36
Photoluminescence from highly excited AlN epitaxial layers
2008 · Yoichi Yamada, Kihyun Choi, et al. · Applied Physics Letters · 35
Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells
2021 · Yoichi Yamada, Hideaki Murotani, et al. · Japanese Journal of Applied Physics · 29
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Nitride Semiconductors
2024 · Hiroshi Fujioka, Hideto Miyake, et al. · physica status solidi (b) · 23
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Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 · Hideaki Murotani, Yoichi Yamada, et al. · physica status solidi (b) · 22
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Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 · Hideaki Murotani, Takahiro Kuronaka, et al. · Journal of Applied Physics · 19
Silicon concentration dependence of optical polarization in AlGaN epitaxial layers
2011 · Hideaki Murotani, Yoichi Yamada, et al. · Applied Physics Letters · 16
Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination
2019 · Hideaki Murotani, Kazunori Shibuya, et al. · Japanese Journal of Applied Physics · 14
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Localization-induced inhomogeneous screening of internal electric fields in AlGaN-based quantum wells
2007 · Hideaki Murotani, Takuya Saito, et al. · Applied Physics Letters · 14
Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates
2021 · Hideaki Murotani, Atsushi Fujii, et al. · Applied Physics Express · 13
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Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN light-emitting diodes
2018 · Hideaki Murotani, Yoichi Yamada · Japanese Journal of Applied Physics · 12
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High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells
2017 · Hideaki Murotani, Katsuto Nakamura, et al. · Applied Physics Express · 10
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Huge binding energy of localized biexcitons in Al-rich AlxGa1−xN ternary alloys
2011 · Ryo Kittaka, Hirotaka Muto, et al. · Applied Physics Letters · 10
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 · Hideaki Murotani, Hiroya Andoh, et al. · Japanese Journal of Applied Physics · 9
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Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration
2012 · Satoshi Kurai, Kazuhide Shimomura, et al. · Journal of Applied Physics · 8
Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K
2018 · Hideaki Murotani, Yuya Hayakawa, et al. · Journal of Applied Physics · 5
Low temperature synthesis of Li and Cl added Bi-2212 superconductors
2012 · Masaki Noro, Hiroya Andoh, et al. · Physics Procedia · 5
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Recombination dynamics of localized excitons in AlxGa1‐xN (0.37<x<0.81) ternary alloys
2011 · Hideaki Murotani, Ryo Kittaka, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer
2018 · Hideaki Murotani, Kazuki Ikeda, et al. · physica status solidi (b) · 4
Temperature Dependence of Optical Polarization in AlGaN‐Based Multiple Quantum Wells with Emission Wavelengths of 220–260 nm
2025 · Hideaki Murotani, Hiromasa Hayashi, et al. · physica status solidi (b) · 3
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Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells
2023 · Hideaki Murotani, Keigo Nakatsuru, et al. · Japanese Journal of Applied Physics · 3
Works count: 67
Citation count: 513
H-index: 13
I10-index: 17
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