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Maxime Leménager

Observed names: Leménager, Maxime, Maxime Lemenager
Institution: Murata (France)
ORCID: 0009-0000-1283-4641
Observed ORCID: 0009-0000-1283-4641
OpenAlex ID: A5010656785
Role of the oxidation conditions on the orientation of TiNxOy grown by atomic layer deposition: Impact on the optical and electrical properties
2024 · Kou Ihara, Julien Cardin, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 1
Layer-Resolved Dielectric Characterization of Highly Integrated 3D Mim Capacitors Using Conductive-AFM
2026 · Ziad Gharibeh, Maxime Lemenager, et al. · ECS Meeting Abstracts
Accuracy and reproducibility of ambient topographies at the nanoscale by AFM: Several months of metrological monitoring
2025 · Ziad Gharibeh, Maxime Leménager, et al. · Springer Link (Chiba Institute of Technology)
Accuracy and reproducibility of ambient topographies at the nanoscale by AFM: Several months of metrological monitoring
2025 · Ziad Gharibeh, Maxime Leménager, et al. · EPJ Web of Conferences
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Impact of Oxidation Conditions on the Orientation of TiNxOy Synthesized by ALD: A Study of Optical and Electrical Properties
2024 · Ihara, Kou, Cardin, Julien, et al. · HAL
Optimization and Characterization of ALD-Deposited Nb₂O₅ for High-Performance MIM Capacitors
2024 · Ihara, Kou, Labbe, C., et al. · HAL
Study of Nb2O5 High-k Dielectric Material Deposited By Atomic Layer Deposition for Metal-Insulator-Metal Capacitor
2023 · Kou Ihara, Christophe Labbé, et al. · ECS Meeting Abstracts
Improvement of TiN thin film properties deposited by Atomic Layer Deposition
2022 · Ihara, Kou, Leménager, Maxime, et al. · HAL
Dépôt par couche atomique de couches minces diélectriques pour des condensateurs de haute densité à haute fiabilité
2019 · Maxime Lemenager · theses.fr (ABES)
TiN/Al2O3 Interface Study through ALD Process Modulations
2018 · Maxime Leménager, Frédéric Voiron, et al. · ECS Meeting Abstracts
Works count: 12
Citation count: 1
H-index: 1
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