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Т. А. Багаев

Observed names: Bagaev T. A., T A Bagaev, T. A. Bagaev, T.A. Bagaev, Timur A. Bagaev, Timur Anatol'evich Bagaev, Timur Bagaev, Т. А. Bagaev, Т. Багаев, Т.А. Багаев
ORCID: 0000-0002-5920-1865
Observed ORCID: 0000-0002-5920-1865
OpenAlex ID: A5010818407
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
2019 · Maxim A. Ladugin, Irina V. Yarotskaya, et al. · Crystals · 28
High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)
2014 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Photonics Technology Letters · 26
Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures
2017 · S. O. Slipchenko, A. A. Podoskin, et al. · Journal of Applied Physics · 25
High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength
2013 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Photonics Technology Letters · 22
On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
2014 · S. O. Slipchenko, A. A. Podoskin, et al. · Semiconductors · 19
High peak optical power of 1ns pulse duration from laser diodes – low voltage thyristor vertical stack
2019 · S. O. Slipchenko, A. A. Podoskin, et al. · Optics Express · 17
Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact
2016 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · Optics Express · 16
Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures
2015 · A A Podoskin, O S Soboleva, et al. · Semiconductor Science and Technology · 15
A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm
2014 · S. O. Slipchenko, A. A. Podoskin, et al. · Journal of Applied Physics · 15
Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm)
2021 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Photonics Technology Letters · 13
High-Power and Repetion Rate Nanosecond Pulse Generation in “Diode Laser—Thyristor” Stacks
2020 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Photonics Technology Letters · 13
High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
2013 · M A Ladugin, Yu P Koval', et al. · Quantum Electronics · 11
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Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping
2019 · Sergey O. Slipchenko, Maxim A. Ladugin, et al. · IEEE Transactions on Electron Devices · 10
Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-Thyristors
2016 · Sergey O. Slipchenko, Alexandr A. Podoskin, et al. · IEEE Transactions on Electron Devices · 10
Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
2017 · M A Ladugin, A A Marmalyuk, et al. · Quantum Electronics · 9
Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors
2016 · S. O. Slipchenko, A. A. Podoskin, et al. · Journal of Applied Physics · 8
Double integrated laser-thyristor
2019 · T.A. Bagaev, M.A. Ladugin, et al. · Quantum Electronics · 6
High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
2021 · T.A. Bagaev, N.V. Gul’tikov, et al. · Quantum Electronics · 5
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Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate
2021 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Transactions on Electron Devices · 5
Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
2018 · M A Ladugin, T A Bagaev, et al. · Quantum Electronics · 5
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Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
2014 · V. P. Konyaev, A. A. Marmalyuk, et al. · Semiconductors · 5
Temperature Dependence of the Turn-On Delay Time of High-Power Lasers–Thyristors
2019 · O. S. Soboleva, A. A. Podoskin, et al. · IEEE Transactions on Electron Devices · 4
A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions
2017 · A. D. Maksimov, V. Yu. Eistrikh-Geller, et al. · Inorganic Materials · 4
Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD
2016 · I I Zasavitskii, A N Zubov, et al. · Quantum Electronics · 4
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High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems
2016 · Sergey Slipchenko, Aleksandr Podoskin, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Works count: 78
Citation count: 338
H-index: 11
I10-index: 14
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