Author

Xinghuan Chen

Institution: China Electronic Product Reliability and Environmental Test Institute

Observed institutions: University of Electronic Science and Technology of China, Chongqing University, China Electronic Product Reliability and Environmental Test Institute, State Key Laboratory of Electronic Thin Films and Integrated Devices

ORCID: 0000-0002-8294-1730

Observed ORCID: 0000-0002-8294-1730

OpenAlex ID: A5010878128

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

2024 · Chenbi Li, Xinghuan Chen, et al. · Micromachines · 45

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Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

2021 · Ruize Sun, Xinghuan Chen, et al. · Applied Physics Letters · 33

Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress

2022 · Xiaoming Wang, Wanjun Chen, et al. · IEEE Transactions on Electron Devices · 22

A High-Performance Tunable LED-Compatible Current Regulator Using an Integrated Voltage Nanosensor

2019 · Zeheng Wang, Shengji Wang, et al. · IEEE Transactions on Electron Devices · 22

On the Abnormal Reduction and Recovery of Dynamic R ON Under UIS Stress in Schottky p-GaN Gate HEMTs

2023 · Chao Liu, Xinghuan Chen, et al. · IEEE Transactions on Power Electronics · 13

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

2024 · Xinghuan Chen, Zhiyuan He, et al. · Applied Physics Letters · 12

The ESD Robustness of Schottky-Gate p-GaN HEMT Under Different States

2025 · Yijun Shi, Dongsheng Zhao, et al. · IEEE Transactions on Electron Devices · 11

Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress

2023 · Xiaoming Wang, Wanjun Chen, et al. · IEEE Transactions on Electron Devices · 11

A GA-based query optimization method for web information retrieval

2006 · Zhengyu Zhu, Xinghuan Chen, et al. · Applied Mathematics and Computation · 11

Analysis of Degradation Behavior and Mechanism of p-GaN Gate HEMT Under High-Power Microwave Irradiation

2025 · Mingen Lv, Jing Xiao, et al. · IEEE Transactions on Electron Devices · 8

“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs

2024 · Yunfeng Hu, Liang He, et al. · IEEE Electron Device Letters · 7

A Novel High Performance Lateral AlGaN/GaN Schottky Barrier Diode Using Highly Effective Field Plate with Polarization Enhanced Channel

2019 · Zeheng Wang, Xuewei Feng, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 4

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling

2026 · Zeheng Wang, Xinghuan Chen, et al. · Small · 3

Investigation Into Degradation and Failure Mechanism of Schottky-Type p-GaN Gate HEMT Under Power Cycling Tests

2026 · Zijun Luo, Zhiyuan He, et al. · IEEE Transactions on Electron Devices · 3

The ESD Robustness and Protection Technology of P-GaN HEMT

2025 · Yijun Shi, Yantao Chen, et al. · Micromachines · 3

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Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

2024 · Zhiyuan He, Liang He, et al. · Journal of Physics D Applied Physics · 3

Gate Damage Mechanism of Schottky-Type p-GaN Gate HEMTs in Reverse Conduction Mode Under Surge Current Stress

2024 · Xiaoming Wang, Ruize Sun, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3

Modelling on GaN Power HEMT with Condideration of Subthreshold Swing Using Artificial Intelligence Technology

2019 · Yuanzhe Yao, Zeheng Wang, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 3

Time-dependent monotonic and non-monotonic dynamic R DS,ON variations and mechanisms in p-GaN Gate HEMTs

2025 · Yao Li, Ke Zhang, et al. · Journal of Physics D Applied Physics · 2

Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel

2023 · Xinghuan Chen, Fangzhou Wang, et al. · Micromachines · 2

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Method of information retrieval based on computing maximum-weight-matching

2007 · Xinghuan Chen · Computer Engineering and Applications Journal · 2

Comparative Investigation on Device-Level Failure of Three Typical SiC MOSFETs Under Single Surge Current Stress

2026 · Liang He, Mowen Zhang, et al. · IEEE Transactions on Power Electronics · 1

Coupled Degradation Behavior in a Monolithically Integrated GaN Power Chip Under Load Dump Stress