Author

M. Kassmi

Observed names: M Kassmi, Mohamed El Kassmi

Institutions: Tunis University, Centre National de la Recherche Scientifique, Laboratoire des Technologies de la Microélectronique, Tunis El Manar University, Université Grenoble Alpes

Observed institutions: Tunis University, Centre National de la Recherche Scientifique, Laboratoire des Technologies de la Microélectronique, Tunis El Manar University, Université Grenoble Alpes

ORCID: 0000-0001-5668-1990

Observed ORCID: 0000-0001-5668-1990

OpenAlex ID: A5010933076

Vertical device architecture by molding of organic-based thin film transistor

1998 · Francis Garnier, Riadh Hajlaoui, et al. · Applied Physics Letters · 30

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

2014 · O. Khaldi, P. Gonon, et al. · Journal of Applied Physics · 29

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

2016 · M. Kassmi, J. Pointet, et al. · Journal of Applied Physics · 13

Reliability of HfO 2 metal–insulator–metal capacitors under AC stress

2016 · M Kassmi, F Jomni, et al. · Journal of Physics D Applied Physics · 4

Works count: 4

Citation count: 76

H-index: 4

I10-index: 3